发明授权
- 专利标题: HEMT with etch-stop
- 专利标题(中): HEMT带蚀刻停止
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申请号: US676359申请日: 1984-11-29
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公开(公告)号: US4742379A公开(公告)日: 1988-05-03
- 发明人: Yoshimi Yamashita , Kinjiro Kosemura , Hidetoshi Ishiwari , Sumio Yamamoto , Shigeru Kuroda
- 申请人: Yoshimi Yamashita , Kinjiro Kosemura , Hidetoshi Ishiwari , Sumio Yamamoto , Shigeru Kuroda
- 申请人地址: JPX Kanagawa
- 专利权人: Fujitsu Limited
- 当前专利权人: Fujitsu Limited
- 当前专利权人地址: JPX Kanagawa
- 优先权: JPX58-224650 19831129; JPX58-224634 19831129
- 主分类号: H01L21/306
- IPC分类号: H01L21/306 ; H01L21/8236 ; H01L21/8252 ; H01L27/06 ; H01L29/778 ; H01L29/80
摘要:
A compound semiconductor device comprises an enhancement-mode transistor and a depletion-mode transistor, each of which has a heterojunction and utilizes a two-dimensional electron gas. The method of producing the device comprises the steps of: forming an undoped GaAs channel layer on a semi-insulating GaAs substrate; forming an N-type AlGaAs electron-supply layer so as to form the heterojunction; forming an N-type GaAs layer; forming an AlGaAs layer; selectively etching the AlGaAs layer to form a recess; performing an etching treatment using an etchant which can etch rapidly GaAs and etch slowly AlGaAs to form simultaneously grooves for gate electrodes of the enhancement-mode transistor and the depletion-mode transistor, the bottoms of the grooves being in the N-type AlGaAs layer and the distance between the bottoms being equal to the thickness of the AlGaAs layer; and forming simultaneously the gate electrodes in the grooves.
公开/授权文献
- US5902791A Metalloproteinase inhibitors 公开/授权日:1999-05-11