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公开(公告)号：US4578343A
公开(公告)日：1986-03-25
申请号：US717477
申请日：1985-03-28
IPC分类号： H01L29/812 , H01L21/027 , H01L21/28 , H01L21/338 , H01L29/417 , H01L29/80 , G03C5/00
CPC分类号： H01L29/66863 , H01L21/0272 , H01L21/0277 , H01L29/80 , Y10S438/949
摘要： A method for producing a field effect type semiconductor device includes the steps of forming a semiconductor active layer on a substrate, forming a resist layer on the semiconductor active layer, exposing a first portion of the resist layer in accordance with a gate electrode pattern, carrying out auxiliary exposure of a second portion near the first portion after or before the exposure of the first portion. The method further includes developing the exposed resist layer, forming a recess in the semiconductor active layer by etching the exposed semiconductor active layer using the resist layer as a mask and forming a gate electrode on the surface of the recess using the resist layer as a mask. This method improves the series resistance between the source electrode and the gate electrode, and also improves the Schottky withstand voltage between the drain electrode and the gate electrode.
摘要翻译： 一种场效应半导体器件的制造方法，其特征在于，在基板上形成半导体活性层，在半导体活性层上形成抗蚀剂层，根据栅电极图案露出抗蚀剂层的第一部分，承载 在第一部分的曝光之后或之前，在第一部分附近的第二部分的辅助曝光。 该方法进一步包括显影曝光的抗蚀剂层，通过使用抗蚀剂层作为掩模蚀刻暴露的半导体有源层，在半导体有源层中形成凹陷，并使用抗蚀剂层作为掩模在凹槽的表面上形成栅电极 。 该方法提高了源电极和栅电极之间的串联电阻，并且还提高了漏电极和栅电极之间的肖特基耐受电压。
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公开(公告)号：US4742379A
公开(公告)日：1988-05-03
申请号：US676359
申请日：1984-11-29
IPC分类号： H01L21/306 , H01L21/8236 , H01L21/8252 , H01L27/06 , H01L29/778 , H01L29/80
CPC分类号： H01L27/0883 , H01L21/30621 , H01L21/8236 , H01L21/8252 , H01L27/0605 , H01L29/7787 , Y10S148/131 , Y10S148/168
摘要： A compound semiconductor device comprises an enhancement-mode transistor and a depletion-mode transistor, each of which has a heterojunction and utilizes a two-dimensional electron gas. The method of producing the device comprises the steps of: forming an undoped GaAs channel layer on a semi-insulating GaAs substrate; forming an N-type AlGaAs electron-supply layer so as to form the heterojunction; forming an N-type GaAs layer; forming an AlGaAs layer; selectively etching the AlGaAs layer to form a recess; performing an etching treatment using an etchant which can etch rapidly GaAs and etch slowly AlGaAs to form simultaneously grooves for gate electrodes of the enhancement-mode transistor and the depletion-mode transistor, the bottoms of the grooves being in the N-type AlGaAs layer and the distance between the bottoms being equal to the thickness of the AlGaAs layer; and forming simultaneously the gate electrodes in the grooves.
摘要翻译： 复合半导体器件包括增强型晶体管和耗尽型晶体管，其各自具有异质结并且利用二维电子气。 制造该器件的方法包括以下步骤：在半绝缘GaAs衬底上形成未掺杂的GaAs沟道层; 形成N型AlGaAs电子供给层以形成异质结; 形成N型GaAs层; 形成AlGaAs层; 选择性地蚀刻AlGaAs层以形成凹陷; 使用蚀刻剂进行蚀刻处理，其可以快速蚀刻GaAs并缓慢蚀刻AlGaAs以同时形成用于增强型晶体管和耗尽型晶体管的栅电极的沟槽，凹槽的底部在N型AlGaAs层中，以及 底部之间的距离等于AlGaAs层的厚度; 并且同时在沟槽中形成栅电极。
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公开(公告)号：US4849368A
公开(公告)日：1989-07-18
申请号：US146664
申请日：1988-01-21
IPC分类号： H01L21/306 , H01L21/8236 , H01L21/8252 , H01L27/06 , H01L29/778
CPC分类号： H01L27/0883 , H01L21/30621 , H01L21/8236 , H01L21/8252 , H01L27/0605 , H01L29/7787 , Y10S148/131 , Y10S148/168
摘要： Disclosed is a method of producing a compound semiconductor device comprising an enhancement-mode transistor and a depletion-mode transistor, each of which has a heterojunction and utilizes a two-dimensional electron gas. The method of producing the device comprises the steps of: forming an undoped GaAs channel layer on a semi-insulating GaAs substrate; forming an N-type AlGaAs electron-supply layer so as to form the heterojunction; forming an N-type GaAs layer; forming an AlGaAs layer; selectively etching the AlGaAs layer to form a recess; performing an etching treatment using an etchant which can etch rapidly GaAs and etch slowly AlGaAs to form simultaneously grooves for gate electrodes of the enhancement-mode transistor and the depletion-mode transistor, the bottoms of the grooves being in the N-type AlGaAs layer and the distance between the bottoms being equal to the thickness of the AlGaAs layer; and forming simultaneously the gate electrodes in the grooves.
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公开(公告)号：US4427991A
公开(公告)日：1984-01-24
申请号：US206543
申请日：1980-08-20
IPC分类号： H01L21/822 , H01L23/047 , H01L23/057 , H01L23/12 , H01L23/50 , H01L23/66 , H01L25/16 , H01L27/04 , H01L23/02
CPC分类号： H01L23/047 , H01L23/057 , H01L23/66 , H01L25/165 , H01L2224/48091 , H01L2924/01079
摘要： A high frequency, hermetically-sealed, semiconductor device with the capability of being cascade-connected with corresponding devices in an advantageous manner. The device consists of a function element which includes at least one semiconductor and other circuit elements necessary for forming a functional amplifier, a DC power circuit for operating the device and high frequency circuits for connecting to corresponding high frequency devices. This device also consists of a metal base substrate, which is used for anchoring the device and mounting other parts of the device thereon, an insulating substrate having a plurality of independent metallized layers used as external contacts and a sealing part for hermetically sealing that part of the insulating substrate which mounts and encloses the function element. The overall shape and structure of the device is such so as to minimize the size of the hermetic seal required to seal any semiconductors in the function element while also minimizing the total size of the device. The device is constructed with external contacts to facilitate alignment in close proximity with corresponding devices for the purpose of forming a cascade amplifier.
摘要翻译： PCT No.PCT / JP79 / 00323 Sec。 371日期1980年8月26日 102（e）日期1980年8月20日PCT提交1979年12月22日PCT公布。 出版物WO80 / 01437 日期1980年7月10日。一种高频，密封的半导体器件，其能够以有利的方式与对应的器件级联连接。 该装置包括功能元件，其包括形成功能放大器所需的至少一个半导体和其它电路元件，用于操作该器件的DC电源电路和用于连接到相应的高频器件的高频电路。 该装置还包括金属基底基底，其用于锚固装置并安装其上的装置的其它部分，具有用作外部触点的多个独立金属化层的绝缘基底和用于气密地密封该部分的密封部分 绝缘基板，其安装并包围功能元件。 装置的整体形状和结构使得密封功能元件中的任何半导体所需的气密密封的尺寸最小化，同时最小化装置的总尺寸。 该器件由外部触点构成，以便于与相应的器件紧密配合以形成级联放大器。
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