发明授权
- 专利标题: Method of making light-receiving diode
- 专利标题(中): 制造光接收二极管的方法
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申请号: US884894申请日: 1986-07-14
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公开(公告)号: US4758525A公开(公告)日: 1988-07-19
- 发明人: Yasuhiro Kida , Koichi Suda , Kunihiro Matsukuma , Keiichi Morita
- 申请人: Yasuhiro Kida , Koichi Suda , Kunihiro Matsukuma , Keiichi Morita
- 申请人地址: JPX Tokyo
- 专利权人: Hitachi, Ltd.
- 当前专利权人: Hitachi, Ltd.
- 当前专利权人地址: JPX Tokyo
- 优先权: JPX60-154024 19850715
- 主分类号: H01L31/04
- IPC分类号: H01L31/04 ; H01L21/265 ; H01L31/0216 ; H01L31/068 ; H01L31/103 ; H01L31/18 ; H01L21/385 ; H01L21/40 ; H01L21/425
摘要:
In a method of manufacturing a solar cell including a p-n junction formed in a semiconductor substrate, impurity ions are implanted through a mask in the form of an oxide film covering a light receiving surface of the semiconductor substrate except an electrode forming part, thereby forming a p-n junction which is deep in an area beneath the electrode forming part but shallow in the remaining area. Formation of the shallow p-n junction improves the spectral sensitivity in a short wavelength range. Further, utilization of the oxide film as a passivation film can prevent shortening of the life time of minority carriers in the substrate due to heat treatment, thereby retarding the electron-hole recombination rate at the light receiving surface of the substrate.
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