公开(公告)号：US4643913A

公开(公告)日：1987-02-17

申请号：US687162

申请日：1984-12-28

申请人： Masaaki Okunaka ,  Mitsuo Nakatani ,  Haruhiko Matsuyama ,  Hitoshi Yokono ,  Tokio Isogai ,  Tadashi Saitoh ,  Kunihiro Matsukuma ,  Sumiyuki Midorikawa ,  Satoru Suzuki

发明人： Masaaki Okunaka ,  Mitsuo Nakatani ,  Haruhiko Matsuyama ,  Hitoshi Yokono ,  Tokio Isogai ,  Tadashi Saitoh ,  Kunihiro Matsukuma ,  Sumiyuki Midorikawa ,  Satoru Suzuki

IPC分类号： H01L31/04 ,  C07F7/00 ,  H01L21/283 ,  H01L21/288 ,  H01L31/0216 ,  H01L31/0224 ,  H01L31/18

CPC分类号： C07F7/006 ,  H01L31/02168 ,  H01L31/022425 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： A process for producing solar cells which comprises applying a composition for anti-reflection coating formation on one side of a silicon base plate having a p-n junction therein, printing an Ag paste for contact formation on predetermined areas of the coat, and heat-treating the resulting plate at a temperature of 400.degree. to 900.degree. C. to complete anti-reflection coating and a light-receiving side contact, the process being characterized in that the composition for anti-reflection coating formation contains as essential component, (a) at least one member selected from the metal-organic ligand complex compounds represented by the general formula M(OR.sub.1).sub.n (L).sub.a-n wherein M is a metal selected from Zn, Al, Ga, In, Ti, Zr, Sn, V, Nb, Ta, Mo, and W; R.sub.1 is a C.sub.1 -C.sub.18 alkyl group; L is an organic ligand which forms an non-hydrolyzable bond with the metal ion; a is the valency of the metal M; and n is an integer satisfying 1.ltoreq.n

摘要翻译： 一种太阳能电池的制造方法，其特征在于，在具有pn结的硅基板的一面上涂布抗反射涂层用组合物，在所述涂层的规定区域印刷用于接触形成的Ag浆料，并对所述涂料进行热处理 得到的板在400-900℃的温度下完成防反射涂层和光接收侧接触，其特征在于用于防反射涂层形成的组合物包含作为必要组分的（a）在 选自由通式M（OR1）n（L）a表示的金属 - 有机配体络合物中的至少一种成分其中M是选自Zn，Al，Ga，In，Ti，Zr，Sn，V，Nb ，Ta，Mo和W; R1是C1-C18烷基; L是与金属离子形成不可水解键的有机配体; a为金属M的化合价; n为1，n为1的整数，通式（OR 1）n-1M（L）anOM（OR 1）n-1（L）a表示的水解缩合物，（b） 化合物，和（c）溶剂。

公开(公告)号：US4758525A

公开(公告)日：1988-07-19

申请号：US884894

申请日：1986-07-14

申请人： Yasuhiro Kida ,  Koichi Suda ,  Kunihiro Matsukuma ,  Keiichi Morita

发明人： Yasuhiro Kida ,  Koichi Suda ,  Kunihiro Matsukuma ,  Keiichi Morita

IPC分类号： H01L31/04 ,  H01L21/265 ,  H01L31/0216 ,  H01L31/068 ,  H01L31/103 ,  H01L31/18 ,  H01L21/385 ,  H01L21/40 ,  H01L21/425

CPC分类号： H01L31/1804 ,  H01L31/02161 ,  H01L31/068 ,  H01L31/103 ,  Y02E10/547 ,  Y02P70/521 ,  Y10S438/928 ,  Y10S438/965

摘要： In a method of manufacturing a solar cell including a p-n junction formed in a semiconductor substrate, impurity ions are implanted through a mask in the form of an oxide film covering a light receiving surface of the semiconductor substrate except an electrode forming part, thereby forming a p-n junction which is deep in an area beneath the electrode forming part but shallow in the remaining area. Formation of the shallow p-n junction improves the spectral sensitivity in a short wavelength range. Further, utilization of the oxide film as a passivation film can prevent shortening of the life time of minority carriers in the substrate due to heat treatment, thereby retarding the electron-hole recombination rate at the light receiving surface of the substrate.

摘要翻译： 在制造包含形成在半导体衬底中的pn结的太阳能电池的方法中，杂质离子通过覆盖半导体衬底的除了电极形成部分的光接收表面的氧化膜的形式通过掩模注入，从而形成 pn结，其深处在电极形成部分下方的区域中，但在其余区域中较浅。 浅p-n结的形成提高了在短波长范围内的光谱灵敏度。 此外，作为钝化膜的氧化膜的利用可以防止由于热处理而使基板中的少数载流子的寿命缩短，从而延迟基板的受光面的电子 - 空穴复合率。