发明授权
- 专利标题: Method for producing via holes in polymer dielectrics
- 专利标题(中): 在聚合物电介质中制造通孔的方法
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申请号: US617申请日: 1987-01-05
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公开(公告)号: US4764485A公开(公告)日: 1988-08-16
- 发明人: James A. Loughran , James G. McMullen , Alexander J. Yerman
- 申请人: James A. Loughran , James G. McMullen , Alexander J. Yerman
- 申请人地址: NY Schenectady
- 专利权人: General Electric Company
- 当前专利权人: General Electric Company
- 当前专利权人地址: NY Schenectady
- 主分类号: B23K26/00
- IPC分类号: B23K26/00 ; B26F1/31 ; B29C59/14 ; H01L21/311 ; H01L23/538 ; H05K3/00 ; C23F1/02 ; B44C1/22
摘要:
A method for producing a hole in a polymer film includes the steps of depositing a conductive layer onto the polymer film and irradiating a spot on the layer with a burst of focused laser energy at a level sufficient to form an opening in the film and, subsequently, plasma etching the film so as to form a hole of desired depth in the polymer film underlying the opening in the conductive layer. This method is particularly applicable to the formation of multichip intergrated circuit packages in which a plurality of chips formed in a semiconductor wafer are coated with a polymer film covering the chips and the substrates. The holes are provided for the purpose of interconnecting selected chip contact pads via a deposited conductive layer which overlies the film and fills the holes.
公开/授权文献
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