发明授权
- 专利标题： Unframed via interconnection with dielectric etch stop
- 专利标题（中）： 通过与电介质蚀刻停止的互连进行非框架化
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申请号： US845110申请日： 1986-03-27
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公开(公告)号： US4767724A公开(公告)日： 1988-08-30
- 发明人: Manjin J. Kim , Bruce F. Griffing , David W. Skelly
- 申请人： Manjin J. Kim , Bruce F. Griffing , David W. Skelly
- 申请人地址： NY Schenectady
- 专利权人： General Electric Company
- 当前专利权人： General Electric Company
- 当前专利权人地址： NY Schenectady
- 主分类号： H01L21/3213
- IPC分类号： H01L21/3213 ; H01L21/302 ; H01L21/3065 ; H01L21/311 ; H01L21/316 ; H01L21/768 ; H01L21/441
摘要：
A layer of aluminum oxide or other insulative metal oxide is employed as an etch stop in the fabrication of very large scale integrated circuit devices. The use of such etch stops permits fabrication of unframed or borderless via openings and correspondingly permits greater metallization line pitch, smaller circuit features, and more reliable interlayer electrical contact. A method for insulative metal oxide deposition is also described.
公开/授权文献
- US5832877A Pet toy product with integral treat receiving receptacles 公开/授权日：1998-11-10
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