发明授权
- 专利标题: Mosfet semiconductor device and manufacturing method thereof
- 专利标题(中): Mosfet半导体器件及其制造方法
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申请号: US060304申请日: 1987-06-10
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公开(公告)号: US4780428A公开(公告)日: 1988-10-25
- 发明人: Yukinori Nakakura , Nobuyuki Kato
- 申请人: Yukinori Nakakura , Nobuyuki Kato
- 申请人地址: JPX Osaka
- 专利权人: Sharp Kabushiki Kaisha
- 当前专利权人: Sharp Kabushiki Kaisha
- 当前专利权人地址: JPX Osaka
- 优先权: JPX60-52608 19850315
- 主分类号: H01L29/78
- IPC分类号: H01L29/78 ; H01L21/28 ; H01L21/283 ; H01L21/314 ; H01L29/51 ; H01L29/74 ; H01L21/265
摘要:
A method of forming a gate insulating film on a MOSFET. After a SiO.sub.2 film is formed by thermal oxidation as a gate insulating film on a MOSFET, the SiO.sub.2 film is removed by selective etching from the surface area other than MOSFET region, and an oxygen doped semi-insulating polycrystalline silicon film is deposited thereon. Then, a silicon nitride layer is deposited and a SiO.sub.2 film is formed by CVD method on the surface area other than the MOSFET region.