发明授权
- 专利标题： Process for fabricating quantum-well devices
- 专利标题（中）： 量子阱器件制造工艺
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申请号： US830775申请日： 1986-02-18
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公开(公告)号： US4783427A公开(公告)日： 1988-11-08
- 发明人: Mark A. Reed , Robert T. Bate
- 申请人： Mark A. Reed , Robert T. Bate
- 申请人地址： TX Dallas
- 专利权人： Texas Instruments Incorporated
- 当前专利权人： Texas Instruments Incorporated
- 当前专利权人地址： TX Dallas
- 主分类号： H01L21/20
- IPC分类号： H01L21/20 ; H01L21/8252 ; H01L29/15 ; H01L29/76 ; H01L29/203 ; H01L21/205 ; H01L21/306 ; H01L29/205
摘要：
The present invention teaches a process for fabrication of quantum-well devices, in which the quantum-wells are configured as small islands of GaAs in an AlGaAs matrix. Typically these islands are roughly cubic, with dimensions of about 100 Angstroms per side. To fabricate these, an n- on n+ epitaxial GaAs structure is grown, and then is etched to an e-beam defined patterned twice, and AlGaAs is epitaxially regrown each time. This defines the quantum wells of GaAs in the AlGaAs matrix, and output contacts are then easily formed.
公开/授权文献
- US5154093A Adjustable cable end fitting 公开/授权日：1992-10-13
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