发明授权
- 专利标题: Semiconductor integrated circuit device
- 专利标题(中): 半导体集成电路器件
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申请号: US131323申请日: 1987-12-08
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公开(公告)号: US4791474A公开(公告)日: 1988-12-13
- 发明人: Yoshihide Sugiura , Hiroaki Ichikawa , Nobutake Matsumura , Nobuo Sasaki
- 申请人: Yoshihide Sugiura , Hiroaki Ichikawa , Nobutake Matsumura , Nobuo Sasaki
- 申请人地址: JPX Kawasaki
- 专利权人: Fujitsu Limited
- 当前专利权人: Fujitsu Limited
- 当前专利权人地址: JPX Kawasaki
- 优先权: JPX54-97623 19790731
- 主分类号: H01L27/092
- IPC分类号: H01L27/092 ; H01L21/82 ; H01L21/8238 ; H01L23/525 ; H01L23/535 ; H01L27/118 ; H01L27/12 ; H01L29/78 ; H01L29/786 ; H01L27/04
摘要:
A semiconductor integrated circuit device includes basic semiconductor elements arranged regularly in lines and rows and located at intersecting points of the lines and rows and wiring conductor layers arranged among the basic semiconductor elements regularly in lines and rows. In this semiconductor integrated circuit device, according to a desired logic operation, wiring conductor layers are cut or contact holes are formed on the wiring conductor layers to form wiring metal layers and connect the basic semiconductor elements to one another, so that an integrated circuit chip capable of performing the desired logic operation is obtained.
公开/授权文献
- US4338572A HF Amplifier circuit 公开/授权日:1982-07-06