A current switching circuit enabling current switching at a speed of several gigabits per second (Gbit/sec) or several giga Hertz (GHz) in analog integrated circuits and digital integrated circuits using GaAs FETs is so constructed that the current switching is effected by a pair of diodes, whose cathodes are connected in common and which are driven by a GaAs FET circuit (source follower circuit). This current switching circuit includes first and second FETs, each of which has a source, a drain and a gate. First and second input signals are connected to the gates of the first and the second FETs, respectively. First and second diodes are provided with anodes connected with the sources of the first and the second FETs, respectively. A constant current source is connected in common with the cathodes of the first and the second diodes, and a load circuit is connected with the drain of at least one of the first and the second FETs. By virtue of this arrangement, current flowing through the load circuit is switched, depending on the first and the second input signals, with an output signal being taken out from each load circuit.