发明授权
- 专利标题： Method for making semiconductor device free from electrical short circuits through a semiconductor layer
- 专利标题（中）： 通过半导体层制造半导体器件不受电短路的方法
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申请号： US82115申请日： 1987-08-06
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公开(公告)号： US4812415A公开(公告)日： 1989-03-14
- 发明人: Shunpei Yamazaki , Kunio Suzuki , Mikio Kinka , Takeshi Fukada , Masayoshi Abe , Ippei Kobayashi , Katsuhiko Shibata , Masato Susukida , Susumu Nagayama , Kaoru Koyanagi
- 申请人： Shunpei Yamazaki , Kunio Suzuki , Mikio Kinka , Takeshi Fukada , Masayoshi Abe , Ippei Kobayashi , Katsuhiko Shibata , Masato Susukida , Susumu Nagayama , Kaoru Koyanagi
- 申请人地址： JPX
- 专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址： JPX
- 优先权： JPX60-209595 19850921; JPX60-209296 19850921; JPX60-248640 19851106
- 主分类号： H01L27/142
- IPC分类号： H01L27/142 ; H01L31/02 ; H01L31/0216 ; H01L31/20 ; H01L31/18
摘要：
An improved semiconductor device is disclosed which is free from current leakage due to pin-holes or other gaps. Also an improved method for processing a semiconductor device is shown. According to the invention, gaps produced during the fabricating process of the semiconductor layer are filled with insulator in advance of deposition of electrodes. By virtue of this configuration, short current paths do not result when electrodes are provided on the semiconductor layer.
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