发明授权
- 专利标题: Nonvolatile, semiconductor memory device
- 专利标题(中): 非易失性半导体存储器件
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申请号: US64480申请日: 1987-06-22
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公开(公告)号: US4816883A公开(公告)日: 1989-03-28
- 发明人: Livio Baldi
- 申请人: Livio Baldi
- 申请人地址: ITX
- 专利权人: SGS Microelettronica S.p.A.
- 当前专利权人: SGS Microelettronica S.p.A.
- 当前专利权人地址: ITX
- 优先权: ITX83630A/86 19860710
- 主分类号: H01L21/8247
- IPC分类号: H01L21/8247 ; H01L21/8246 ; H01L27/112 ; H01L27/115 ; H01L29/788 ; H01L29/792 ; H01L29/78 ; G11C11/34 ; H01L27/02
摘要:
A nonvolatile, EPROM type memory cell, formed using a p-channel MOS device instead of an n-channel MOS device as customary according to the prior art, offers several advantages: improved programming characteristics, a relatively low gate voltage for writing, a lower power dissipation and above all compatability with the great majority of CMOS fabrication processes. An explanation of such surprising characteristics may be attributed to more favorable conditions of electric field during programming, i.e. during charging of the floating gate, in respect to those existing in the case of the conventional n-channel memory cell.