Apparatus and method for improved thermal coupling of a semiconductor
package to a cooling plate and increased electrical coupling of package
leads on more than one side of the package to a circuit board
    1.
    发明授权
    Apparatus and method for improved thermal coupling of a semiconductor package to a cooling plate and increased electrical coupling of package leads on more than one side of the package to a circuit board 失效
    一种用于改善半导体封装与冷却板的热耦合的装置和方法,并且将封装引线的多于一侧的封装引线的电耦合增加到电路板

    公开(公告)号:US5237485A

    公开(公告)日:1993-08-17

    申请号:US602926

    申请日:1990-10-22

    IPC分类号: H01L23/40 H05K1/02

    摘要: A heat sink and method for heat sinking a package containing electronic components is described. The heat sinking is accomplished by use of a cooling plate located beneath a circuit board. The package having leads extending from more than one side of the package is positioned on the cooling plate so that the leads from the sides of the package can be electrically coupled to conductors on the circuit board wherein the circuit board is disposed about at least two and preferably three sides of the package. The package is secured to the cooling plate by a spring clip. The spring clip permits flexible positioning of the package relative to the cooling plate including positioning the package in close proximity of the edge of the cooling plate. Thermal conduction between the package and the cooling plate can be enhanced by the presence of a compressible thermally-conducting material. The circuit board preferably has an opening therein so as to permit the board to be in close proximity to the three sides of the package for increased connectibility.

    摘要翻译: 描述了一种用于散热包含电子部件的包装的散热器和方法。 通过使用位于电路板下方的冷却板来实现散热。 具有从封装的多于一侧延伸的引线的封装被定位在冷却板上,使得来自封装侧面的引线可以电耦合到电路板上的导体,其中电路板被设置在至少两个和 最好是包装的三面。 包装通过弹簧夹固定到冷却板。 弹簧夹允许包装相对于冷却板的灵活定位,包括将包装定位在冷却板的边缘附近。 可以通过存在可压缩的导热材料来增强封装和冷却板之间的热传导。 电路板优选地具有开口,以允许电路板靠近封装的三个侧面,以增加可连接性。

    Phase regulation circuit, particularly for horizontal phase regulation
in data displays
    6.
    发明授权
    Phase regulation circuit, particularly for horizontal phase regulation in data displays 失效
    相位调节电路,特别适用于数据显示中的水平相位调节

    公开(公告)号:US4837464A

    公开(公告)日:1989-06-06

    申请号:US55954

    申请日:1987-06-01

    CPC分类号: G09G5/12

    摘要: This circuit comprises a phase-lock stage receiving at the input a reference signal and the synchronism signal EN and generating at the output a triangular signal in phase correlation with the synchronism signal, a rectangular waveform generator receiving at the input the triangular signal and supplying at the output a rectangular signal, a drive element receiving the rectangular signal and generating a periodic control signal, as well as a phase comparator receiving at the input the triangular signal and the control signal, as well as a further reference signal and generating at the output an error signal correlated with the phase shift of the drive element and fed to the rectangular waveform generator. The reference signal fed to the phase-lock stage or to the phase comparator can be suitably varied within preset limits by an external potentiometer.

    摘要翻译: 该电路包括相位锁定级,在输入端接收参考信号和同步信号EN,并在输出端产生与同步信号相位相关的三角形信号;矩形波形发生器,在输入端接收三角形信号并在 输出矩形信号,接收矩形信号并产生周期性控制信号的驱动元件以及在输入端接收三角波信号和控制信号的相位比较器以及另一参考信号并在输出端产生 与驱动元件的相移相关并馈送到矩形波形发生器的误差信号。 馈送到锁相级或相位比较器的参考信号可以通过外部电位器在预设的限制内适当变化。

    Eeprom memory cell with a single polysilicon level and a tunnel oxide
zone
    7.
    发明授权
    Eeprom memory cell with a single polysilicon level and a tunnel oxide zone 失效
    具有单个多晶硅层和隧道氧化物区的Eeprom存储单元

    公开(公告)号:US4823316A

    公开(公告)日:1989-04-18

    申请号:US119498

    申请日:1987-11-12

    申请人: Carlo Riva

    发明人: Carlo Riva

    CPC分类号: H01L29/7883

    摘要: The memory cell comprises a selection transistor, pickup transistor and a tunnel condenser formed using a single layer of polysilicon. The tunnel condenser is formed on an active area distinct and separate from that of the pickup transistor.

    摘要翻译: 存储单元包括选择晶体管,拾取晶体管和使用单层多晶硅形成的隧道电容器。 隧道冷凝器形成在与拾取晶体管不同且分离的有源区域上。

    Nonvolatile, semiconductor memory device
    8.
    发明授权
    Nonvolatile, semiconductor memory device 失效
    非易失性半导体存储器件

    公开(公告)号:US4816883A

    公开(公告)日:1989-03-28

    申请号:US64480

    申请日:1987-06-22

    申请人: Livio Baldi

    发明人: Livio Baldi

    CPC分类号: H01L29/7885 H01L27/115

    摘要: A nonvolatile, EPROM type memory cell, formed using a p-channel MOS device instead of an n-channel MOS device as customary according to the prior art, offers several advantages: improved programming characteristics, a relatively low gate voltage for writing, a lower power dissipation and above all compatability with the great majority of CMOS fabrication processes. An explanation of such surprising characteristics may be attributed to more favorable conditions of electric field during programming, i.e. during charging of the floating gate, in respect to those existing in the case of the conventional n-channel memory cell.

    摘要翻译: 使用根据现有技术的通常使用p沟道MOS器件代替n沟道MOS器件的非易失性EPROM型存储单元提供了几个优点:改进的编程特性,用于写入的相对较低的栅极电压,较低的 功耗以及绝大多数CMOS制造工艺的兼容性。 关于这种令人惊奇的特性的解释可以归因于在编程期间,即在对浮动栅极充电期间相对于在常规n沟道存储单元的情况下存在的电场的更有利的条件。