摘要:
A heat sink and method for heat sinking a package containing electronic components is described. The heat sinking is accomplished by use of a cooling plate located beneath a circuit board. The package having leads extending from more than one side of the package is positioned on the cooling plate so that the leads from the sides of the package can be electrically coupled to conductors on the circuit board wherein the circuit board is disposed about at least two and preferably three sides of the package. The package is secured to the cooling plate by a spring clip. The spring clip permits flexible positioning of the package relative to the cooling plate including positioning the package in close proximity of the edge of the cooling plate. Thermal conduction between the package and the cooling plate can be enhanced by the presence of a compressible thermally-conducting material. The circuit board preferably has an opening therein so as to permit the board to be in close proximity to the three sides of the package for increased connectibility.
摘要:
This method, requiring a reduced number of process phases and providing an efficient, high-voltage structure, comprises forming a P-well region of the N-channel transistor of a CMOS device, by means of boron atom implant through a protective mask, forming at least one insulation region surrounding the CMOS device, forming edge regions having the same conductivity type as the insulation region but with a smaller concentration of impurities on at least one part of the insulation region and in the high-voltage electronic devices by means of the same boron atom implant used to form the P-well region.
摘要:
A method for correctly positioning a metallic plate supporting a semiconductor chip in a mold used for encapsulation, wherein according to a first solution, at least a pair of retractable locating pins are utilized together with a lead connected to the supporting plate. The ends of the locating pins are retracted in the final phase of encapsulation, from the surfaces of the plate, whereas in the initial phase they are in direct contact with the surfaces. According to a second solution, a pair of clamping pins are indirectly connected to the plate through the interposition of insulating thicknessings.
摘要:
Disclosed is a monolithic integrated semiconductor device which may contain specimens of seven different circuit components; namely: lateral N-MOS and lateral P-MOS transistors (CMOS), vertical N-DMOS and vertical P-DMOS transistors, vertical NPN bipolar transistors, vertical PNP bipolar transistors with isolated collector and low leakage junction diodes as well as a process for fabricating such a device.
摘要:
An apparatus and a relative method which permit carrying out a complete cycle of functional tests and parametric measurements on EPROM type semiconductor devices during their permanence inside a burn-in chamber, thus greatly reducing the time necessary for testing and classifying the devices, besides ensuring a higher reliability. The system utilizes special "intelligent" cards, i.e., provided with a card microprocessor which may be connected to a supervisory system's CPU directing the test and classification process of the devices.
摘要:
This circuit comprises a phase-lock stage receiving at the input a reference signal and the synchronism signal EN and generating at the output a triangular signal in phase correlation with the synchronism signal, a rectangular waveform generator receiving at the input the triangular signal and supplying at the output a rectangular signal, a drive element receiving the rectangular signal and generating a periodic control signal, as well as a phase comparator receiving at the input the triangular signal and the control signal, as well as a further reference signal and generating at the output an error signal correlated with the phase shift of the drive element and fed to the rectangular waveform generator. The reference signal fed to the phase-lock stage or to the phase comparator can be suitably varied within preset limits by an external potentiometer.
摘要:
The memory cell comprises a selection transistor, pickup transistor and a tunnel condenser formed using a single layer of polysilicon. The tunnel condenser is formed on an active area distinct and separate from that of the pickup transistor.
摘要:
A nonvolatile, EPROM type memory cell, formed using a p-channel MOS device instead of an n-channel MOS device as customary according to the prior art, offers several advantages: improved programming characteristics, a relatively low gate voltage for writing, a lower power dissipation and above all compatability with the great majority of CMOS fabrication processes. An explanation of such surprising characteristics may be attributed to more favorable conditions of electric field during programming, i.e. during charging of the floating gate, in respect to those existing in the case of the conventional n-channel memory cell.
摘要:
The process calls for covering of the dielectric with a thin additional layer of polysilicon which has the function of protecting the dielectric from any defects which would otherwise be introduced from the subsequent masking.
摘要:
An apparatus and a relative method which permit carrying out a complete cycle of functional tests and parametric measurements on EPROM type semiconductor devices during their permanence inside a burn-in chamber, thus greatly reducing the time necessary for testing and classifying the devices, besides ensuring a higher reliability. The system utilizes special "intelligent" cards, i.e. provided with a card microprocessor which may be connected to a supervisory system's CPU directing the test and classification process of the devices.