发明授权
- 专利标题: Process and apparatus for low pressure chemical vapor deposition of refractory metal
- 专利标题(中): 难熔金属低压化学气相沉积工艺及装置
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申请号: US92967申请日: 1987-09-04
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公开(公告)号: US4817557A公开(公告)日: 1989-04-04
- 发明人: Michael Diem , Michael A. Fisk , Jon C. Goldman
- 申请人: Michael Diem , Michael A. Fisk , Jon C. Goldman
- 申请人地址: CA San Jose
- 专利权人: Anicon, Inc.
- 当前专利权人: Anicon, Inc.
- 当前专利权人地址: CA San Jose
- 主分类号: C23C16/54
- IPC分类号: C23C16/54 ; H01L21/285 ; C23C16/00
摘要:
A process and apparatus for the low pressure, cold wall, chemical vapor deposition of refractory metals, such as tungsten on a silicon wafer. The silicon wafer is introduced into a loading lock wherein the pressure is reduced to subatmospheric pressure. The silicon wafer is transferred to a deposition chamber where it is heated to an elevated temperature. A refractory metal carbonyl vapor is introduced into the deposition chamber and dissociates to deposit a refractory metal on the silicon wafer. The wafer is transferred to an unloading lock where it is allowed to cool and is then removed.
公开/授权文献
- USD418729S Screwdriver 公开/授权日:2000-01-11