发明授权
- 专利标题： Semiconductor light-emitting element
- 专利标题（中）： 半导体发光元件
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申请号： US911371申请日： 1986-09-25
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公开(公告)号： US4819057A公开(公告)日： 1989-04-04
- 发明人: Katsuyuki Naito , Masayoshi Okamoto , Koichi Mizushima , Toshio Nakayama , Masami Sugiuchi , Akira Miura
- 申请人： Katsuyuki Naito , Masayoshi Okamoto , Koichi Mizushima , Toshio Nakayama , Masami Sugiuchi , Akira Miura
- 申请人地址： JPX Kawasaki
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JPX Kawasaki
- 优先权： JPX60-214550 19850930; JPX60-214551 19850930; JPX60-214552 19850930; JPX60-214559 19850930; JPX61-96388 19860425
- 主分类号： H01L33/00
- IPC分类号： H01L33/00 ; H01L51/30 ; H01L51/50 ; H01L29/78
摘要：
A semiconductor light-emitting element of a metal/organic film/semiconductor junction structure has a semiconductor layer, and an organic Langmuir-Blodgett thin film formed on the semiconductor layer. The thin film includes an electron donative organic monomolecular compound whose longest absorption peak wavelength in an electron transition spectrum falls within a range of 300 nm to 600 nm. A layer of metallic material is formed on the thin film.
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