公开(公告)号：US4819057A

公开(公告)日：1989-04-04

申请号：US911371

申请日：1986-09-25

申请人： Katsuyuki Naito ,  Masayoshi Okamoto ,  Koichi Mizushima ,  Toshio Nakayama ,  Masami Sugiuchi ,  Akira Miura

发明人： Katsuyuki Naito ,  Masayoshi Okamoto ,  Koichi Mizushima ,  Toshio Nakayama ,  Masami Sugiuchi ,  Akira Miura

IPC分类号： H01L33/00 ,  H01L51/30 ,  H01L51/50 ,  H01L29/78

CPC分类号： H01L51/5012 ,  H01L33/0033 ,  H01L51/005 ,  H01L51/0061 ,  H01L51/0075 ,  H01L51/0052 ,  H01L51/0065 ,  H01L51/0067 ,  H01L51/0068 ,  H01L51/0071 ,  H01L51/0072

摘要： A semiconductor light-emitting element of a metal/organic film/semiconductor junction structure has a semiconductor layer, and an organic Langmuir-Blodgett thin film formed on the semiconductor layer. The thin film includes an electron donative organic monomolecular compound whose longest absorption peak wavelength in an electron transition spectrum falls within a range of 300 nm to 600 nm. A layer of metallic material is formed on the thin film.

摘要翻译： 金属/有机膜/半导体结结构的半导体发光元件具有形成在半导体层上的半导体层和有机Langmuir-Blodgett薄膜。 薄膜包括电子转移光谱中最长吸收峰波长在300nm至600nm的范围内的电子给体有机单分子化合物。 在薄膜上形成一层金属材料。

公开(公告)号：US5155566A

公开(公告)日：1992-10-13

申请号：US675964

申请日：1991-03-27

申请人： Toshio Nakayama ,  Nobuhiro Gemma ,  Akira Miura ,  Katsuyuki Naito ,  Syun Egusa

发明人： Toshio Nakayama ,  Nobuhiro Gemma ,  Akira Miura ,  Katsuyuki Naito ,  Syun Egusa

IPC分类号： B05D1/20 ,  G02F1/15 ,  G02F1/361 ,  H01L51/00 ,  H01L51/30

CPC分类号： H01L51/0504 ,  B05D1/202 ,  B82Y30/00 ,  B82Y40/00 ,  G02F1/15 ,  G02F1/361 ,  H01L51/0035 ,  H01L51/0051 ,  H01L51/0508 ,  H01L51/005 ,  H01L51/0078

摘要： An organic thin film element has a structure in which an organic thin film layer, an insulating layer, and a back electrode are sequentially formed on a substrate obtained by forming an electrode, an insulating layer and a layer consisting of polycyclic aromatic group molecules or a derivative thereof or a carbon layer having a graphite structure on the surface of a substrate main body. An effect of controlling the orientation of the organic thin film layer can be enhanced by the surface layer of the substrate similar in chemical structure to molecules constituting the organic thin film layer. A neutral-ionic transition of a complex can be effectively caused by an electric field applied from the electrodes.

公开(公告)号：US5144473A

公开(公告)日：1992-09-01

申请号：US500925

申请日：1990-03-29

申请人： Nobuhiro Gemma ,  Toshio Nakayama ,  Syun Egusa ,  Akira Miura ,  Makoto Azuma ,  Shinya Aoki ,  Katsuyuki Naito

发明人： Nobuhiro Gemma ,  Toshio Nakayama ,  Syun Egusa ,  Akira Miura ,  Makoto Azuma ,  Shinya Aoki ,  Katsuyuki Naito

IPC分类号： G02F1/153

CPC分类号： G02F1/1533

摘要： An organic thin film display element comprises a pair of electrodes, an organic thin film interposed between the electrodes and including both donor molecules and acceptor molecules, and an insulating layer having a relative dielectric constant of 10 or more, and interposed between at least one of the electrodes and the organic thin film.

公开(公告)号：US5663115A

公开(公告)日：1997-09-02

申请号：US395930

申请日：1995-02-28

申请人： Katsuyuki Naito ,  Masami Sugiuchi ,  Satoshi Takayama ,  Hirohisa Miyamoto ,  Hideyuki Nishizawa ,  Sawako Fujioka ,  Akiko Watanabe ,  Tatsuo Nomaki

发明人： Katsuyuki Naito ,  Masami Sugiuchi ,  Satoshi Takayama ,  Hirohisa Miyamoto ,  Hideyuki Nishizawa ,  Sawako Fujioka ,  Akiko Watanabe ,  Tatsuo Nomaki

IPC分类号： B41M5/30 ,  B41M5/34

CPC分类号： B41M5/305

摘要： A thermal recording medium comprising a color former, a developer and a reversible material which can effect a reversible change in at lease a part of a composition system where thermal energies with two different values are supplied or where two different heat histories are provided, and a phase separation controller serves to change phase separation rate between the color former or the developer and the reversible material in the vicinity of its melting point, if necessary.

摘要翻译： 一种包含成色剂，显色剂和可逆材料的热记录介质，其可以在至少一部分组合体系中产生可逆变化，其中提供具有两个不同值的热能或者提供两个不同的热历史， 如果需要，相分离控制器用于改变成色剂或显影剂与可逆材料在其熔点附近的相分离速率。

公开(公告)号：US5061509A

公开(公告)日：1991-10-29

申请号：US571119

申请日：1990-08-23

申请人： Katsuyuki Naito ,  Shinya Aoki ,  Toshio Nakayama

发明人： Katsuyuki Naito ,  Shinya Aoki ,  Toshio Nakayama

IPC分类号： C30B29/58 ,  C08G73/10 ,  C23C14/12 ,  G02F1/1337

CPC分类号： C23C14/12 ,  C08G73/10 ,  G02F1/13378

摘要： A polyimide thin film is formed on a substrate by imparting energy under vacuum, by means of heating, ultraviolet light or electron beam irradiation, or a combination thereof, to a polyimide having in the polymer main chain imide bonds and decomposable bonds such as carbon-carbon single bond differing from the imide bonds so as to break the decomposable bonds.

公开(公告)号：US09159463B2

公开(公告)日：2015-10-13

申请号：US13625194

申请日：2012-09-24

申请人： Katsuyuki Naito ,  Norihiro Yoshinaga ,  Yoshihiko Nakano ,  Yoshihiro Akasaka ,  Shigeru Matake

发明人： Katsuyuki Naito ,  Norihiro Yoshinaga ,  Yoshihiko Nakano ,  Yoshihiro Akasaka ,  Shigeru Matake

IPC分类号： H01L31/0224 ,  H01B1/02 ,  H01B1/04 ,  C23C16/26

CPC分类号： H01B1/02 ,  B82Y10/00 ,  C23C16/26 ,  H01B1/04 ,  H01L29/1606 ,  H01L29/413 ,  H01L31/022425 ,  H01L31/022466 ,  Y02E10/549 ,  Y10T428/256 ,  Y10T428/26 ,  Y10T428/266

摘要： According to one embodiment, a conductive material includes a carbon substance and a metallic substance mixed with and/or laminated to the carbon substance. The carbon substance has at least one dimension of 200 nm or less. The carbon substance includes a graphene selected from single-layered graphene and multi-layered graphene, a part of carbon atoms constituting the graphene is substituted with a nitrogen atom. The metallic substance includes at least one of a metallic particle and a metallic wire.

摘要翻译： 根据一个实施方案，导电材料包括与碳物质混合和/或层压的碳物质和金属物质。 碳物质具有200nm以下的至少一个尺寸。 碳物质包括选自单层石墨烯和多层石墨烯的石墨烯，构成石墨烯的一部分碳原子被氮原子取代。 金属物质包括金属颗粒和金属线中的至少一种。

公开(公告)号：US20130078550A1

公开(公告)日：2013-03-28

申请号：US13628649

申请日：2012-09-27

申请人： Wu Mei ,  Shigeru Matake ,  Taishi Fukazawa ,  Yoshihiro Akasaka ,  Katsuyuki Naito

发明人： Wu Mei ,  Shigeru Matake ,  Taishi Fukazawa ,  Yoshihiro Akasaka ,  Katsuyuki Naito

IPC分类号： B01J35/10 ,  H01M8/10

CPC分类号： H01M4/92 ,  H01M4/8605 ,  H01M8/1004 ,  H01M2008/1095 ,  Y02E60/50

摘要： According to one embodiment, there is provided a catalyst layer containing a catalyst material. The catalyst layer satisfying requirements below: a porosity of 20 to 90% by vol; and a relation R1≧R0×1.2. In the above inequality, R1 represents an alignment ratio of the catalyst layer and R0 represents an alignment ratio of the catalyst material in powder form having a random crystalline plane distribution, and each of the alignment ratios is calculated from a X-ray diffraction spectrum having a diffraction angle 2θ range from 10 to 90 degree measured using Cu-Kα-rays.

摘要翻译： 根据一个实施方案，提供了含有催化剂材料的催化剂层。 催化剂层满足以下要求：孔隙率为20〜90体积％ 关系R1≥R0×1.2。 在上述不等式中，R1表示催化剂层的取向比，R0表示具有无规晶面分布的粉末状的催化剂材料的取向比，并且，由X射线衍射光谱 衍射角2＆thetas; 使用Cu-Kα射线测量的范围为10至90度。

公开(公告)号：US07842557B2

公开(公告)日：2010-11-30

申请号：US12249688

申请日：2008-10-10

申请人： Yuichi Motoi ,  Katsuyuki Naito

发明人： Yuichi Motoi ,  Katsuyuki Naito

IPC分类号： H01L21/82

CPC分类号： G11C17/16 ,  G11C16/0483 ,  G11C17/18 ,  H01L27/115 ,  H01L27/11568

摘要： A nonvolatile storage device includes a plurality of bit lines 21 arranged in a column direction on a substrate; a plurality of word lines 35 arranged in a row direction on the substrate; a memory cell array 20 having a plurality of memory cells 31, where a store state of each of the memory cells 31 changes according to an electric signal relatively applied to the word line 35 and the bit line 21; a word line selection unit having a needle 51 relatively movable with respect to the substrate which comes into contact with one word line 35, setting the word line 35 in contact with the needle 51 to a selection state; and a sense amplifier 48 detecting through the bit line an electrical signal exhibiting the store state of the memory cell 31 to be connected to the word line.

摘要翻译： 非易失性存储装置包括在基板上沿列方向配置的多个位线21， 在基板上排列成行方向的多个字线35; 具有多个存储单元31的存储单元阵列20，其中每个存储单元31的存储状态根据相对于字线35和位线21的电信号而改变; 字线选择单元，其具有相对于与一条字线35接触的基板相对移动的针51，将与针51接触的字线35设定为选择状态; 以及读出放大器48，通过位线检测呈现要连接到字线的存储单元31的存储状态的电信号。

公开(公告)号：US07486553B2

公开(公告)日：2009-02-03

申请号：US11533648

申请日：2006-09-20

申请人： Yuichi Motoi ,  Katsuyuki Naito

发明人： Yuichi Motoi ,  Katsuyuki Naito

IPC分类号： G11C7/00

CPC分类号： G11C17/16 ,  G11C16/0483 ,  G11C17/18 ,  H01L27/115 ,  H01L27/11568

摘要： A nonvolatile storage device includes a plurality of bit lines 21 arranged in a column direction on a substrate; a plurality of word lines 35 arranged in a row direction on the substrate; a memory cell array 20 having a plurality of memory cells 31, where a store state of each of the memory cells 31 changes according to an electric signal relatively applied to the word line 35 and the bit line 21; a word line selection unit having a needle 51 relatively movable with respect to the substrate which comes into contact with one word line 35, setting the word line 35 in contact with the needle 51 to a selection state; and a sense amplifier 48 detecting through the bit line an electrical signal exhibiting the store state of the memory cell 31 to be connected to the word line.

摘要翻译： 非易失性存储装置包括在基板上沿列方向配置的多个位线21， 在基板上排列成行方向的多个字线35; 具有多个存储单元31的存储单元阵列20，其中每个存储单元31的存储状态根据相对于字线35和位线21的电信号而改变; 字线选择单元，其具有相对于与一条字线35接触的基板相对移动的针51，将与针51接触的字线35设定为选择状态; 以及读出放大器48，通过位线检测呈现要连接到字线的存储单元31的存储状态的电信号。

公开(公告)号：US20080293183A1

公开(公告)日：2008-11-27

申请号：US12184428

申请日：2008-08-01

申请人： Takayuki TSUKAMOTO ,  Katsuyuki Naito ,  Sumio Ashida

发明人： Takayuki TSUKAMOTO ,  Katsuyuki Naito ,  Sumio Ashida

IPC分类号： H01L45/00

CPC分类号： H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/1273 ,  H01L45/144 ,  H01L45/16 ,  Y10S438/90

摘要： Even if sizes of storage cells are reduced in a phase change memory, properties of the respective storage cells can be set to be approximately equal to one another and a current amount required for phase change can be reduced sufficiently. The phase change memory includes at least a storage cell. The storage cell includes a first electrode, an electrically conductive portion provided on the first electrode and having at least two electrically conductive bodies with approximately the same shape provided on the first electrode, the electrically conductive bodies being spaced by a high resistance film with a high resistance, a recording layer provided on the electrically conductive portion and having phase change material which can change between a first phase state with a first specific resistance and a second phase state with a second specific resistance different from the first specific resistance, and a second electrode provided on the recording layer.

摘要翻译： 即使存储单元的尺寸在相变存储器中减少，各个存储单元的特性可以被设置为大致相等，并且可以充分地减少相变所需的电流量。 相变存储器至少包括存储单元。 存储单元包括第一电极，设置在第一电极上的导电部分，并且具有至少两个导电体，其具有设置在第一电极上的大致相同的形状，导电体由高电阻膜隔开，高电阻 电阻，设置在导电部分上并具有能够在具有第一电阻率的第一相位状态与第二相位状态之间变化的相变材料的记录层，其具有不同于第一电阻率的第二电阻率;以及第二电极 提供在记录层上。