发明授权
- 专利标题: Semiconductor integrated circuit with nonvolatile memory
- 专利标题(中): 具有非易失性存储器的半导体集成电路
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申请号: US174975申请日: 1988-03-29
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公开(公告)号: US4821240A公开(公告)日: 1989-04-11
- 发明人: Hideo Nakamura , Terumi Sawase
- 申请人: Hideo Nakamura , Terumi Sawase
- 申请人地址: JPX Tokyo
- 专利权人: Hitachi, Ltd.
- 当前专利权人: Hitachi, Ltd.
- 当前专利权人地址: JPX Tokyo
- 优先权: JPX60-86797 19850423; JPX60-90268 19850426; JPX60-144719 19850703
- 主分类号: G11C7/24
- IPC分类号: G11C7/24 ; G11C16/22 ; G11C11/40 ; G11C13/00
摘要:
A semiconductor integrated circuit with a nonvolatile memory has a plurality of nonvolatile data memory elements arranged in a matrix and a means for reading data from the memory elements in accordance with an address signal which specifies a position in the matrix. A protecting data memory element for storing at least one-bit protection data is disposed in the matrix. Whether operations such as a programming (i.e., writing), erasing or reading with respect to the data memory elements will be allowed or inhibited is determined in accordance with the contents of the protecting data memory element. In other words, data security in an arbitrary area of the matrix can be accomplished based on the content of the protecting data memory element.
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