发明授权
- 专利标题： Method of fabricating large area semiconductor arrays
- 专利标题（中）： 制造大面积半导体阵列的方法
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申请号： US185600申请日： 1988-04-25
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公开(公告)号： US4822755A公开(公告)日： 1989-04-18
- 发明人: William G. Hawkins , Donald J. Drake , Michael R. Campanelli
- 申请人： William G. Hawkins , Donald J. Drake , Michael R. Campanelli
- 申请人地址： CT Stamford
- 专利权人： Xerox Corporation
- 当前专利权人： Xerox Corporation
- 当前专利权人地址： CT Stamford
- 主分类号： H01L21/302
- IPC分类号： H01L21/302 ; B41J2/16 ; H01L21/301 ; H01L21/306 ; H01L29/06 ; H01L21/00 ; H01L21/02 ; H01L21/72 ; H01L21/98
摘要：
A method for separating chips formed on a silicon substrate is provided which uses a combination of reactive ion etching techniques combined with orientation etching to yield integrated chips having edges which can be more precisely butted together to form large area arrays.
公开/授权文献
- US4324241A Hypodermic syringe operable with double-looped ring 公开/授权日：1982-04-13
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