发明授权
- 专利标题： Electron gas hole gas tunneling transistor device
- 专利标题（中）： 电子气孔气体隧道晶体管器件
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申请号： US76765申请日： 1987-07-23
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公开(公告)号： US4835581A公开(公告)日： 1989-05-30
- 发明人: Takao Kuroda , Akiyoshi Watanabe , Takao Miyazaki , Hiroyoshi Matsumura
- 申请人： Takao Kuroda , Akiyoshi Watanabe , Takao Miyazaki , Hiroyoshi Matsumura
- 申请人地址： JPX Tokyo
- 专利权人： Hitachi, Ltd.
- 当前专利权人： Hitachi, Ltd.
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX61-173649 19860725
- 主分类号： H01L29/205
- IPC分类号： H01L29/205 ; H01L21/338 ; H01L29/10 ; H01L29/739 ; H01L29/778 ; H01L29/812
摘要：
Disclosed is a semiconductor device comprising a first semiconductor layer, a second semiconductor layer, and a third semiconductor layer which is formed between the first semiconductor layer and the second semiconductor layer and a band gap of which is narrower than that of each of the first and second layers, so that band discontinuities in conduction bands and valence bands of the three layers form a barrier to the third semiconductor layer, and that a tunneling current can flow through the third semmiconductor layer owing to an internal electric field of the third semiconductor layer.
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