发明授权
- 专利标题: Method and apparatus for forming a layer
- 专利标题(中): 用于形成层的方法和装置
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申请号: US140903申请日: 1988-01-04
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公开(公告)号: US4857139A公开(公告)日: 1989-08-15
- 发明人: Mamoru Tashiro , Kazuo Urata , Shunpei Yamazaki
- 申请人: Mamoru Tashiro , Kazuo Urata , Shunpei Yamazaki
- 申请人地址: JPX Tokyo
- 专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址: JPX Tokyo
- 优先权: JPX59-250339 19841126; JPX59-250341 19841126
- 主分类号: C23C16/48
- IPC分类号: C23C16/48
摘要:
A photo CVD apparatus includes a reaction chamber, a vacuum pump, and a light source chamber disposed in the reaction chamber, the light source chamber having a light window. A light source is provided in the light source chamber for irradiating the inside of the reaction chamber through the window. A device inputs reactive gas into the reaction chamber, and an electrode is disposed in the reaction space adjacent to the window and located between the substrate and the window. A method of depositing a layer on a substrate includes the steps of disposing a substrate in a reaction chamber, introducing a reactive gas, and initiating a photo-chemical reaction to deposit the product of the reaction on the substrate by irradiating the reactive gas with light emitted from a light source through a window of a light source chamber in which the light source is disposed. The substrate is then removed from the reaction chamber, and an etchant gas is introduced into the reaction chamber. A voltage is then applied between the substrate holder and an electrode which is located between the window and the substrate holder for carrying out plasma etching of the window.