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US4863834A Silicon-containing polymers as resists 失效
含硅聚合物作为抗蚀剂

Silicon-containing polymers as resists
摘要:
A sensitive deep utltraviolet radiation resist suitable for use in two layer lithography is obtained by brominating poly (1-trimethylsilylpropyne). Positive patterned layers are obtained by coating a substrate with the polymer, irradiating it with ultraviolet radiation, baking the polymer and developing the irradiated portions.
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