发明授权
- 专利标题: Double metal HCMOS compacted array
- 专利标题(中): 双金属HCMOS压实阵列
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申请号: US158066申请日: 1988-02-12
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公开(公告)号: US4884118A公开(公告)日: 1989-11-28
- 发明人: Alex C. Hui , Anthony Y. Wong , Conrad J. Dell'Oca , Daniel Wong , Roger Szeto
- 申请人: Alex C. Hui , Anthony Y. Wong , Conrad J. Dell'Oca , Daniel Wong , Roger Szeto
- 申请人地址: CA Milpitas
- 专利权人: LSI Logic Corporation
- 当前专利权人: LSI Logic Corporation
- 当前专利权人地址: CA Milpitas
- 主分类号: H01L27/118
- IPC分类号: H01L27/118
摘要:
A gate array is provided in which active areas within the substrate are arranged in alternating columns of opposite conductivity type and symmetrical about the center lines through each column so that CMOS devices can be advantageously formed by allocating only small increments of active area to metal routing. The substrate and well taps are also symmetrical about the column center line. The active area symmetry allows p-channel and n-channel transistors to be combined where the p-channel transistor is on either the right or left, thus increasing the flexibility in placing the elements within the integrated circuit chip.
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