发明授权
- 专利标题： Thin film manufacturing system
- 专利标题（中）： 薄膜制造系统
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申请号： US193680申请日： 1988-05-13
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公开(公告)号： US4887548A公开(公告)日： 1989-12-19
- 发明人: Kazuo Urata , Naoki Hirose , Shigenori Hayashi
- 申请人： Kazuo Urata , Naoki Hirose , Shigenori Hayashi
- 申请人地址： JPX Kanagawa
- 专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址： JPX Kanagawa
- 优先权： JPX62-118600 19870515
- 主分类号： H01L21/31
- IPC分类号： H01L21/31 ; C23C16/34 ; C23C16/48 ; H01L21/205
摘要：
A thin film manufacturing system comprises a reaction vessel with a window that is transparent to ultraviolet radiation; a means of exhausting gas from the reaction vessel to a reduced pressure condition, a means of introducing a gas into the reaction vessel to form a thin film, a source of ultraviolet radiation that activates the gas, and slits provided at a predetermined interval on the window that is transparent to ultraviolet radiation.
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