发明授权
- 专利标题： Method of manufacturing a semiconductor device
- 专利标题（中）： 制造半导体器件的方法
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申请号： US290921申请日： 1988-12-28
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公开(公告)号： US4892843A公开(公告)日： 1990-01-09
- 发明人: Johannes E. J. Schmitz , Antonius J. M. Van Dijk , Russell C. Ellwanger
- 申请人： Johannes E. J. Schmitz , Antonius J. M. Van Dijk , Russell C. Ellwanger
- 申请人地址： NY New York
- 专利权人： U.S. Philips Corporation
- 当前专利权人： U.S. Philips Corporation
- 当前专利权人地址： NY New York
- 优先权： NLX8800221 19880129
- 主分类号： C23C16/14
- IPC分类号： C23C16/14 ; H01L21/28 ; H01L21/285 ; H01L21/3205 ; H01L21/768 ; H01L23/52 ; H01L23/532
摘要：
The invention relates to a method of manufacturing a semiconductor device, in which a tungsten layer is provided on a surface of a substrate by reduction of tungsten hexafluoride with hydrogen.According to the invention, the contact resistance of the tungsten with the substrate is considerably reduced by first providing a tungsten layer on the substrate by reduction of tungsten hexafluoride with silane.
公开/授权文献
- US6166437A Silicon on silicon package with precision align macro 公开/授权日：2000-12-26