公开(公告)号：US5847797A

公开(公告)日：1998-12-08

申请号：US832737

申请日：1997-04-04

申请人： Antonius J. M. Van Dijk

发明人： Antonius J. M. Van Dijk

IPC分类号： G02F1/133 ,  G02F1/1333 ,  G02F1/1362 ,  G02F1/1345

CPC分类号： G02F1/1333 ,  G02F1/136204 ,  G02F2001/133354 ,  G02F2001/133374

摘要： The display device comprises a first and a second substrate (52, 53) between which a number of pixels arranged in rows and columns are situated, and said first substrate (52) being provided with a group of electrodes (56, 56', 56") and said second substrate (53) being provided with a group of electrodes (57, 57', 57") for driving the pixels. The display device is characterized in that electrodes of the group of electrodes (56, 56', 56") extend as far as an edge (a) of the first substrate (52), and that the edge (a) of the first substrate (52) and a corresponding edge (a') of a second substrate (53) are positioned relative to each other such that the corresponding edge (a') projects a distance d.sub.1 beyond the edge (b) of the first substrate (52). If electrodes of a further group of electrodes (57, 57', 57") extend as far as a further edge (b') of the second substrate (53), said further edge (b') of the second substrate (53) and a further, corresponding edge (b) of the first substrate (52) are preferably positioned relative to each other in such a manner that the further, corresponding edge (b) projects a further distance d.sub.2 beyond the further edge (b') of the second substrate (53). The distances d.sub.1 and/or d.sub.2 are at least 0.1 mm and preferably at least 0.2 mm.

摘要翻译： 显示装置包括第一和第二基板（52,53），其间排列有行和列的多个像素，并且所述第一基板（52）设置有一组电极（56,56'，56） “），并且所述第二基板（53）设置有用于驱动像素的一组电极（57,57'，57”）。 所述显示装置的特征在于，所述一组电极（56,56'，56“）中的电极延伸至所述第一基板（52）的边缘（a）至所述第一基板的边缘（a） 衬底（52）和第二衬底（53）的对应边缘（a'）相对于彼此定位，使得相应的边缘（a'）突出超过第一衬底（52）的边缘（b）的距离d1 ）。 如果另一组电极（57,57'，57“）的电极延伸到第二衬底（53）的另一边缘（b'），则第二衬底（53）的另一边缘（b'） ）和第一衬底（52）的另一个相应的边缘（b）优选地相对于彼此定位，使得另一对应的边缘（b）突出另外的距离d2超过另一边缘（b'）， 的第二基板（53）。 距离d1和/或d2至少为0.1mm，优选为至少0.2mm。

公开(公告)号：US4892843A

公开(公告)日：1990-01-09

申请号：US290921

申请日：1988-12-28

申请人： Johannes E. J. Schmitz ,  Antonius J. M. Van Dijk ,  Russell C. Ellwanger

发明人： Johannes E. J. Schmitz ,  Antonius J. M. Van Dijk ,  Russell C. Ellwanger

IPC分类号： C23C16/14 ,  H01L21/28 ,  H01L21/285 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/52 ,  H01L23/532

CPC分类号： H01L21/32051 ,  H01L21/28556 ,  H01L21/76877 ,  H01L23/53257 ,  H01L2924/0002

摘要： The invention relates to a method of manufacturing a semiconductor device, in which a tungsten layer is provided on a surface of a substrate by reduction of tungsten hexafluoride with hydrogen.According to the invention, the contact resistance of the tungsten with the substrate is considerably reduced by first providing a tungsten layer on the substrate by reduction of tungsten hexafluoride with silane.