发明授权
US4897699A Group III-V compound based optoelectronic device on silicon substrate
失效
硅基III-V族化合物基光电器件
- 专利标题： Group III-V compound based optoelectronic device on silicon substrate
- 专利标题（中）： 硅基III-V族化合物基光电器件
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申请号： US247390申请日： 1988-09-21
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公开(公告)号： US4897699A公开(公告)日： 1990-01-30
- 发明人: Manijeh Razeghi , Robert Blondeau , Franck Omnes , Martin Defour , Gerard Doriath
- 申请人： Manijeh Razeghi , Robert Blondeau , Franck Omnes , Martin Defour , Gerard Doriath
- 申请人地址： FRX Paris
- 专利权人： Thomson-CSF
- 当前专利权人： Thomson-CSF
- 当前专利权人地址： FRX Paris
- 优先权： FRX8713057 19870922
- 主分类号： H01L31/18
- IPC分类号： H01L31/18 ; H01L33/00
摘要：
Disclosed is an optoelectronic device implanted on a silicon substrate and comprising, in particular, on this substrate, a set of matching layers on which there is made a first confinement layer based on indium phosphide, an active layer based on Ga.sub.x In.sub.1-x As.sub.1-y and a second active layer of indium phosphide.
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