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8 条记录 (耗时 0.023 秒)

    Method for making a diffraction lattice on a semiconductor material
    4.
    发明授权
    Method for making a diffraction lattice on a semiconductor material 失效
    在半导体材料上制作衍射晶格的方法

    公开(公告)号：US5033816A

    公开(公告)日：1991-07-23

    申请号：US284611

    申请日：1988-12-15

    申请人： Robert Blondeau ,  Daniel Rondi ,  Anne Taineau ,  Gervaise Vilain ,  Baudouin de Cremoux

    发明人： Robert Blondeau ,  Daniel Rondi ,  Anne Taineau ,  Gervaise Vilain ,  Baudouin de Cremoux

    IPC分类号： H01S5/00 ,  G02B6/124 ,  H01L33/00 ,  H01S5/12 ,  H01S5/223

    CPC分类号： H01S5/12 ,  G02B6/124 ,  H01L33/0062 ,  H01S5/1231 ,  H01S5/223 ,  Y10S359/90

    摘要： The method consists of the following successive steps: the deposition on a substrate, by epitaxy, of an optical confinement layer, formed by a first semiconducting material; the deposition, by epitaxy of an active layer, formed by a second semiconducting material; the deposition, by epitaxy, of a stop layer, formed by a third semiconducting material, with a thickness of between 0.005 and 0.02 microns; the deposition, by epitaxy, of a guide layer, formed by a fourth semiconducting material, with a thickness of between 0.01 and 0.03 microns; the deposition of a layer of photosensitive resin, and the cutting out of this layer in a shape to be given to the diffraction lattice which is to be made; the attacking of the guide layer by means of a selective, chemical agent which attacks neither the material of the stop layer nor the resin, this chemical agent being allowed to act until the entire thickness of the guide layer has been gone through, said thickness being chosen to be equal to the depth required for the diffraction lattice.

    摘要翻译： 该方法包括以下连续步骤：通过外延沉积在由第一半导体材料形成的光限制层上的衬底上; 通过由第二半导体材料形成的活性层的外延沉积; 通过外延沉积由第三半导体材料形成的具有0.005至0.02微米厚度的阻挡层; 通过外延沉积厚度为0.01至0.03微米的由第四半导体材料形成的引导层的沉积; 沉积感光树脂层，并将该层切割成要被制成的衍射晶格的形状; 通过选择性的化学试剂攻击引导层，既不侵蚀阻挡层材料也不侵蚀树脂，该化学试剂被允许作用直到导向层的整个厚度已经通过，所述厚度为 选择等于衍射晶格所需的深度。

    Method for making an optoelectronic amplifier device, and applications to various optoelectronic
    6.
    发明授权
    Method for making an optoelectronic amplifier device, and applications to various optoelectronic 失效
    制造光电放大器件的方法，以及各种光电器件的应用。

    公开(公告)号：US5424242A

    公开(公告)日：1995-06-13

    申请号：US53809

    申请日：1993-04-29

    申请人： Robert Blondeau ,  Yannick Bourbin ,  Daniel Rondi

    发明人： Robert Blondeau ,  Yannick Bourbin ,  Daniel Rondi

    IPC分类号： G02B6/12 ,  G02B6/13 ,  G02F1/35 ,  H01S5/026 ,  H01S5/16 ,  H01S5/50 ,  H01L21/20

    CPC分类号： H01S5/026 ,  H01S5/164 ,  H01S5/50 ,  Y10S148/095

    摘要： A method for making an optical amplifier according to which a stack of the following layers is made by epitaxy: a first optical guiding layer; a first chemical attack barrier layer; a second optical guiding layer; a second chemical attack barrier layer; an active layer; a confinement layer; and a contact layer. Then at least one amplifier element followed by an optical guide located beneath this amplifier element are etched in these layers. The method can be applied to the making of optoelectronic devices such as modulators, change-over switches, distributors, etc.

    摘要翻译： 一种制造光放大器的方法，根据该放大器，通过外延制造下列层的叠层：第一光导层; 第一个化学侵蚀屏障层; 第二光导层; 第二化学侵蚀阻挡层; 活性层 限制层; 和接触层。 然后在这些层中蚀刻位于该放大器元件下面的至少一个放大器元件和光导。 该方法可以应用于诸如调制器，转换开关，分配器等光电器件的制造。

    Optoelectric device on semi-insulator substrate and methods for making such a device
    7.
    发明授权
    Optoelectric device on semi-insulator substrate and methods for making such a device 失效
    半绝缘体基板上的光电器件及其制造方法

    公开(公告)号：US5214661A

    公开(公告)日：1993-05-25

    申请号：US803595

    申请日：1991-12-09

    申请人： Robert Blondeau ,  Daniel Rondi ,  Genevieve Glastre ,  Michel Krakowski

    发明人： Robert Blondeau ,  Daniel Rondi ,  Genevieve Glastre ,  Michel Krakowski

    IPC分类号： H01L33/00 ,  H01S5/02 ,  H01S5/042 ,  H01S5/227 ,  H01S5/40

    CPC分类号： H01S5/4031 ,  H01L33/0062 ,  H01S5/0422 ,  H01S5/227 ,  H01S5/0208 ,  H01S5/2275

    摘要： Disclosed is an optoelectronic device on a semi-insulator substrate, of the type comprising, stacked on one another, at least:- one substrate made of semi-insulator material,- one lower confinement layer with a first type of conductivity,- at least one active layer in strip form, and- an upper confinement layer with a second type of conductivity. In this device, the lower confinement layer covers one side of the semi-insulator substrate in passing beneath the active layer and coming to a stop substantially vertically to this active layer and the upper confinement layer covers the other side of the semi-insulator substrate in passing over the active layer and coming to a stop substantially vertically to this active layer. The disclosure can be applied notably to the fabrication of lasers.

    摘要翻译： 公开了一种半绝缘体衬底上的光电子器件，其类型包括彼此层叠的至少： - 由半绝缘体材料制成的一个衬底， - 具有第一类导电性的一个下约束层 - 至少 一个带状活性层，和 - 具有第二类导电性的上约束层。 在该装置中，下部限制层覆盖半导体衬底的通过有源层下方的一侧并基本垂直于该有源层停止，并且上限制层覆盖半绝缘体衬底的另一侧 穿过有源层并大致垂直于该活性层停止。 本公开可以应用于激光器的制造。

    Optoelectronic device on semi-insulator substrate and methods for making such a device
    8.
    发明授权
    Optoelectronic device on semi-insulator substrate and methods for making such a device 失效
    半导体绝缘体基板上的光电装置及其制造方法

    公开(公告)号：US5115283A

    公开(公告)日：1992-05-19

    申请号：US530607

    申请日：1990-05-30

    申请人： Robert Blondeau ,  Daniel Rondt ,  Genevieve Glastre ,  Michel Krakowski

    发明人： Robert Blondeau ,  Daniel Rondt ,  Genevieve Glastre ,  Michel Krakowski

    IPC分类号： H01L27/14 ,  H01L33/00 ,  H01S5/00 ,  H01S5/02 ,  H01S5/042 ,  H01S5/227 ,  H01S5/40

    CPC分类号： H01S5/4031 ,  H01L33/0062 ,  H01S5/0422 ,  H01S5/227 ,  H01S5/0208 ,  H01S5/2275

    摘要： Disclosed is an optoelectronic device on a semi-insulator substrate, of the type comprising, stacked on one another, at least:one substrate made of semi-insulator material,one lower confinement layer with a first type of conductivity,at least one active layer in strip form, andan upper confinement layer with a second type of conductivity. In this device, the lower confinement layer covers one side of the semi-insulator substrate in passing beneath the active layer and coming to a stop substantially vertically to this active layer and the upper confinement layer covers the other side of the semi-insulator substrate in passing over the active layer and coming to a stop substantially vertically to this active layer. The disclosure can be applied notably to the fabrication of lasers.

    摘要翻译： 公开了一种半绝缘体衬底上的光电子器件，其类型包括彼此层叠的至少一个：由半绝缘体材料制成的一个衬底，一个具有第一导电类型的下约束层，至少一个有源层 带状，以及具有第二类导电性的上约束层。 在该装置中，下部限制层覆盖半导体衬底的通过有源层下方的一侧并基本垂直于该有源层停止，并且上限制层覆盖半绝缘体衬底的另一侧 穿过有源层并大致垂直于该活性层停止。 本公开可以应用于激光器的制造。