发明授权
- 专利标题： Titanium nitride film in contact hole with large aspect ratio
- 专利标题（中）： 接触孔中的氮化钛膜具有较大的纵横比
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申请号： US199269申请日： 1988-05-26
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公开(公告)号： US4897709A公开(公告)日： 1990-01-30
- 发明人: Natsuki Yokoyama , Yoshio Homma , Kenji Hinode , Kiichiro Mukai
- 申请人： Natsuki Yokoyama , Yoshio Homma , Kenji Hinode , Kiichiro Mukai
- 申请人地址： JPX Tokyo
- 专利权人： Hitachi, Ltd.
- 当前专利权人： Hitachi, Ltd.
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX63-91556 19880415
- 主分类号： H01L21/3205
- IPC分类号： H01L21/3205 ; H01L21/28 ; H01L21/285 ; H01L21/768 ; H01L21/822 ; H01L23/52 ; H01L23/532 ; H01L27/04 ; H01L27/108 ; H01L29/43
摘要：
A semiconductor device includes a titanium nitride film as a barrier which is formed in a hole. The width or diameter of the hole is smaller than 1 .mu.m, and the aspect ratio thereof is larger than 0.7. The sidewall of the hole is substantially perpendicular to the surface of a semiconductor substrate. By the low pressure CVD method with a cold wall type CVD apparatus, it becomes possible to form the titanium nitride film having excellent characteristics with a good step coverage in a considerably fine hole having a large aspect ratio.
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