发明授权
- 专利标题： Aluminum metallized layer formed on silicon wafer
- 专利标题（中）： 在硅晶片上形成铝金属化层
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申请号： US300186申请日： 1989-01-23
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公开(公告)号： US4902582A公开(公告)日： 1990-02-20
- 发明人: Minoru Inoue
- 申请人： Minoru Inoue
- 申请人地址： JPX Kawasaki
- 专利权人： Fujitsu Limited
- 当前专利权人： Fujitsu Limited
- 当前专利权人地址： JPX Kawasaki
- 优先权： JPX59-217398 19841018
- 主分类号： H01L21/388
- IPC分类号： H01L21/388 ; H01L21/28 ; H01L21/285 ; H01L29/45
摘要：
A semiconductor device comprising a metallized layer formed on a silicon substrate, wherein said metallized layer is an aluminum alloy consisting essentially of aluminum, silicon and at least one element selected from the group consisting of titanium, vanadium, chromium, tungsten, and phosphorus the amount of silicon being 1.0% to 3.0% by weight, the amount of said selected element corresponding to the relative service life required of the metallized layer, said required service life being 10 times that of a metallized layer having the same composition as that of the above-mentioned metallized layer except for being free from said element, and the rest being aluminum. For example, the metallized layer may contain at least 0.04% and less than 0.10% by weight of titanium, 1.0% by weight of silicon, and the rest aluminum.
公开/授权文献
- US4456180A Spray nozzle assemblies 公开/授权日：1984-06-26
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