发明授权
- 专利标题: Heterojunction transistor having bipolar characteristics
- 专利标题(中): 具有双极特性的异质结晶体管
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申请号: US197485申请日: 1988-05-23
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公开(公告)号: US4903091A公开(公告)日: 1990-02-20
- 发明人: Toshio Baba , Masaki Ogawa , Keiichi Ohata
- 申请人: Toshio Baba , Masaki Ogawa , Keiichi Ohata
- 申请人地址: JPX Tokyo
- 专利权人: NEC Corporation
- 当前专利权人: NEC Corporation
- 当前专利权人地址: JPX Tokyo
- 优先权: JPX60-72154 19850405; JPX60-72163 19850405
- 主分类号: H01L29/10
- IPC分类号: H01L29/10 ; H01L29/43 ; H01L29/778
摘要:
A heterojunction transistor has a first semiconductor layer of a semi-insulating or a low impurity concentration, a second semiconductor layer formed on the first semiconductor layer and made of such a semiconductor material that, in cooperation with the first semiconductor layer, a first energy recess for electrons and a second energy recess for holes are respectively formed at the bottom of the conduction band and at the top of the valence band to constitute a conductive channel, a third semiconductor layer formed on the second semiconductor layer and forming a PN-junction with the upper surface of the second semiconductor layer to inject carriers into the conductive channel, a control electrode for applying an input signal to the third semiconductor layer, and a ground and an output electrode formed on the second semiconductor layer on the opposite sides of the third semiconductor layer.
公开/授权文献
- US5438407A Spectrometer and apparatus including the spectrometer 公开/授权日:1995-08-01