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54 条记录 (耗时 0.021 秒)

    Heterojunction transistor having bipolar characteristics
    1.
    发明授权
    Heterojunction transistor having bipolar characteristics 失效
    具有双极特性的异质结晶体管

    公开(公告)号：US4903091A

    公开(公告)日：1990-02-20

    申请号：US197485

    申请日：1988-05-23

    申请人： Toshio Baba ,  Masaki Ogawa ,  Keiichi Ohata

    发明人： Toshio Baba ,  Masaki Ogawa ,  Keiichi Ohata

    IPC分类号： H01L29/10 ,  H01L29/43 ,  H01L29/778

    CPC分类号： H01L29/1066 ,  H01L29/10 ,  H01L29/432 ,  H01L29/7787

    摘要： A heterojunction transistor has a first semiconductor layer of a semi-insulating or a low impurity concentration, a second semiconductor layer formed on the first semiconductor layer and made of such a semiconductor material that, in cooperation with the first semiconductor layer, a first energy recess for electrons and a second energy recess for holes are respectively formed at the bottom of the conduction band and at the top of the valence band to constitute a conductive channel, a third semiconductor layer formed on the second semiconductor layer and forming a PN-junction with the upper surface of the second semiconductor layer to inject carriers into the conductive channel, a control electrode for applying an input signal to the third semiconductor layer, and a ground and an output electrode formed on the second semiconductor layer on the opposite sides of the third semiconductor layer.

    摘要翻译： 异质结晶体管具有半绝缘或低杂质浓度的第一半导体层，形成在第一半导体层上并由这种半导体材料制成的第二半导体层，第二半导体层与第一半导体层协作，形成第一能量凹槽 对于电子和用于空穴的第二能量凹槽分别形成在导带的底部和价带的顶部以构成导电通道;第三半导体层，形成在第二半导体层上并形成具有 所述第二半导体层的上表面将载流子注入到所述导电通道中，用于向所述第三半导体层施加输入信号的控制电极，以及形成在所述第三半导体层的相对侧上的所述第二半导体层上的接地和输出电极 半导体层。

    High speed and power transistor
    2.
    发明授权
    High speed and power transistor 失效
    高速和功率晶体管

    公开(公告)号：US4839703A

    公开(公告)日：1989-06-13

    申请号：US102788

    申请日：1987-09-23

    申请人： Keiichi Ohata ,  Hikaru Hida ,  Masaki Ogawa

    发明人： Keiichi Ohata ,  Hikaru Hida ,  Masaki Ogawa

    IPC分类号： H01L29/812 ,  H01L21/331 ,  H01L21/338 ,  H01L29/73 ,  H01L29/737 ,  H01L29/739 ,  H01L29/778 ,  H01L29/80

    CPC分类号： H01L29/739

    摘要： A high speed and high power transistor includes a first layer of a first semiconductor material, a second layer of a second semiconductor material formed on the first layer, the second semiconductor material having a smaller electron affinity than the first semiconductor material, first and second electrode positioned ends of the second layer, respectively, in contact with the first layer, and a control electrode formed on the second layer between the first and second electrodes, the control electrode injecting holes into the second layer in accordance with an input signal to induce an electron channel between the first and second electrodes.

    摘要翻译： 高速和高功率晶体管包括第一半导体材料的第一层，形成在第一层上的第二半导体材料的第二层，具有比第一半导体材料更小的电子亲和力的第二半导体材料，第一和第二电极 分别与第一层接触的第二层的定位端和形成在第一和第二电极之间的第二层上的控制电极，控制电极根据输入信号将孔注入第二层，以诱导 第一和第二电极之间的电子通道。

    Throttle valve position sensor
    6.
    发明授权
    Throttle valve position sensor 失效
    节气门位置传感器

    公开(公告)号：US4989451A

    公开(公告)日：1991-02-05

    申请号：US458782

    申请日：1989-12-29

    申请人： Masaki Ogawa ,  Yoshiaki Kato

    发明人： Masaki Ogawa ,  Yoshiaki Kato

    IPC分类号： G01B7/30 ,  F02D9/00 ,  F02D11/10 ,  F02D41/24 ,  F02D45/00

    CPC分类号： F02D41/28 ,  F02D11/107 ,  F02D11/106

    摘要： A throttle valve sensor having at least two switches for detecting different positions of a throttle valve. The setting of the switching conditions of the switches is such that these switches can not be made OFF simultaneously, over the entire range of the degree of opening of the throttle valve. A detachment of a connector connecting the sensor to a control circuit causes the corresponding port voltage level to be that obtained when all of the switches are made OFF, and as a result, a quick and positive detection of a detachment of the connector can be obtained.

    摘要翻译： 一种节气门传感器，具有至少两个开关，用于检测节流阀的不同位置。 开关的切换条件的设定使得在节流阀的开度的整个范围内，这些开关不能同时关闭。 将传感器连接到控制电路的连接器的拆卸使得相应的端口电压水平是当所有开关断开时获得的端口电压电平，结果可以获得连接器的分离的快速和肯定的检测 。