发明授权
US4904612A Method for manufacturing a planar, self-aligned emitter-base complex
失效
制造平面，自对准发射体 - 基复合物的方法
- 专利标题： Method for manufacturing a planar, self-aligned emitter-base complex
- 专利标题（中）： 制造平面，自对准发射体 - 基复合物的方法
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申请号： US374617申请日： 1989-06-30
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公开(公告)号： US4904612A公开(公告)日： 1990-02-27
- 发明人: Hans-Peter Zwicknagl , Josef Willer , Helmut Tews
- 申请人： Hans-Peter Zwicknagl , Josef Willer , Helmut Tews
- 申请人地址： DEX Berlin and Munich
- 专利权人： Siemens Aktiengesellschaft
- 当前专利权人： Siemens Aktiengesellschaft
- 当前专利权人地址： DEX Berlin and Munich
- 优先权： DEX3735999 19871023
- 主分类号： H01L29/73
- IPC分类号： H01L29/73 ; H01L21/28 ; H01L21/331 ; H01L29/737
摘要：
A method for the manufacture of a planar, self-aligned emitter-base complex, whereby a semiconductor layer structure standard for hetero-bipolar transistors is first grown on a substrate, the base regions are subsequently etching through a mask technique and are provided with the base metallization and with a first dielectric layer and insulation implantations and spacers for electrical insulation of the base are manufactured, and, following thereupon, the emitter region is provided with the emitter metallization and with a third dielectric layer.
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