发明授权
US4906856A Semiconductive photodetection device having coplanar circuit components
失效
半导体光电检测器件具有共面电路元件
- 专利标题: Semiconductive photodetection device having coplanar circuit components
- 专利标题(中): 半导体光电检测器件具有共面电路元件
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申请号: US177829申请日: 1988-03-23
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公开(公告)号: US4906856A公开(公告)日: 1990-03-06
- 发明人: Eiichi Iwanami , Yukito Kawahara , Hiroshi Mukainakano
- 申请人: Eiichi Iwanami , Yukito Kawahara , Hiroshi Mukainakano
- 申请人地址: JPX
- 专利权人: Seiko Instruments Inc.
- 当前专利权人: Seiko Instruments Inc.
- 当前专利权人地址: JPX
- 优先权: JPX59-245601 19841120
- 主分类号: H01L27/146
- IPC分类号: H01L27/146 ; H04N1/028 ; H04N1/031 ; H04N1/193 ; H04N1/40
摘要:
A photoelectric conversion array is comprised of a longitudinal semiconductor substrate formed with a plurality of doped regions electrically isolated from one another and equidistantly aligned in the longitudinal direction of the substrate. Each doped region is comprised of a first region containing therein base, collector and emitter regions arranged to constitute a bipolar phototransistor operative in response to irradiation of incident light onto the base region to induce a photoelectric current between the collector and emitter regions, and a second region disposed adjacent to and laterally of the first region and containing therein a drain region, a source region, a channel region between the drain and source regions and a gate region disposed on the channel region to constitute a MOS switching transistor electrically connected in series to the bipolar phototransistor and selectively operative in response to a control voltage applied to the gate region to enable the induced photoelectric current to flow through the channel region to thereby drive the corresponding bipolar phototransistor.
公开/授权文献
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