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1.发明授权
公开(公告)号：US4906856A
公开(公告)日：1990-03-06
申请号：US177829
申请日：1988-03-23
IPC分类号： H01L27/146 , H04N1/028 , H04N1/031 , H04N1/193 , H04N1/40
CPC分类号： H04N1/1906 , H01L27/14681 , H04N1/031 , H04N1/40056 , H04N1/193
摘要： A photoelectric conversion array is comprised of a longitudinal semiconductor substrate formed with a plurality of doped regions electrically isolated from one another and equidistantly aligned in the longitudinal direction of the substrate. Each doped region is comprised of a first region containing therein base, collector and emitter regions arranged to constitute a bipolar phototransistor operative in response to irradiation of incident light onto the base region to induce a photoelectric current between the collector and emitter regions, and a second region disposed adjacent to and laterally of the first region and containing therein a drain region, a source region, a channel region between the drain and source regions and a gate region disposed on the channel region to constitute a MOS switching transistor electrically connected in series to the bipolar phototransistor and selectively operative in response to a control voltage applied to the gate region to enable the induced photoelectric current to flow through the channel region to thereby drive the corresponding bipolar phototransistor.
摘要翻译： 光电转换阵列由纵向半导体衬底组成，纵向半导体衬底形成有彼此电隔离并沿着衬底的纵向方向等距排列的多个掺杂区域。 每个掺杂区域包括其中包含基底，集电极和发射极区域的第一区域，其被布置成构成响应于入射到基极区域上的入射光的照射而工作的双极光电晶体管，以在集电极和发射极区域之间引起光电流， 所述区域与所述第一区域相邻并且横向设置，并且在其中包含漏极区域，源极区域，所述漏极和源极区域之间的沟道区域以及设置在所述沟道区域上的栅极区域，以构成串联电连接的MOS开关晶体管 双极光电晶体管，并且响应于施加到栅极区域的控制电压选择性地操作，以使感应的光电流流过沟道区域，从而驱动相应的双极光电晶体管。
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公开(公告)号：US5321303A
公开(公告)日：1994-06-14
申请号：US870808
申请日：1992-04-17
IPC分类号： H01L21/301 , B28D5/00 , B28D5/02 , H01L21/304 , H01L31/02 , H01L29/06
CPC分类号： B28D5/022 , H01L21/3043
摘要： A method for manufacturing a semiconductor device using inclined stage of a dicing saw in order to cut the semiconductor substrate obliquely with respect to the depthwise direction. When a plurality of semiconductor chips diced obliquely are connected, a degree of connecting accuracy is increased, and it is possible to realize a contact-type image sensor of high resolving power and high accuracy.
摘要翻译： 为了使半导体衬底相对于深度方向倾斜地切割，制造使用切割锯的倾斜台的半导体器件的方法。 当倾斜切割的多个半导体芯片被连接时，连接精度的程度增加，并且可以实现高分辨率和高精度的接触型图像传感器。
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3.发明授权Image reading apparatus for converting optical image information into an electrical image signal 失效用于将光学图像信息转换成电子图像信号的图像读取装置
公开(公告)号：US5198654A
公开(公告)日：1993-03-30
申请号：US666864
申请日：1991-03-08
IPC分类号： H04N1/028
CPC分类号： H04N3/1581 , H04N3/1512
摘要： The image reading apparatus is of the multi-chip line sensor having a plurality of photoelectric conversion elements connected through corresponding switching elements commonly to every one another. Each group of the commonly connected photoelectric conversion elements outputs on a common line an image signal which is then fed to a sample hold circuit and is thereafter outputted from a single output terminal. By such construction, the image signal from the photoelectric conversion elements is sequentially outputted externally from the single output terminal in the form of output waveshape as held in the sample hold circuit in such manner as to prolong output duration of each bit image signal to thereby enable fast operation of the line sensor.
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公开(公告)号：US5146074A
公开(公告)日：1992-09-08
申请号：US741997
申请日：1991-08-08
IPC分类号： H01L27/146 , H04N5/335 , H04N5/369 , H04N5/374
CPC分类号： H04N3/1518 , H04N3/1512
摘要： The solid state imaging device having an array of bit units formed in a semiconductor substrate. Each bit unit is comprised of a phototransistor having a collector formed of the semiconductor substrate an emitter and a base, a switching transistor of the MOS type having a drain connected to the emitter of the phototransistor, an initializing transistor of the MOS type having a drain connected to the base of the phototransistor, a source receptive of a first reference voltage, and a gate connected to the emitter of the phototransistor, and a resetting transistor of the MOS type having a drain connected to the emitter of the phototransistor, a source receptive of a second reference voltage, and a gate receptive of a reset signal. The resetting transistor operates in the reset signal to enable the initializing transistor to initialize the phototransistor. The switching transistor drives the initialized phototransistor to effect reading of image.
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公开(公告)号：US5109440A
公开(公告)日：1992-04-28
申请号：US358153
申请日：1989-05-26
IPC分类号： H01L27/146 , H01L31/0248 , H04N1/028 , H04N1/19 , H04N1/193 , H04N5/335 , H04N5/357 , H04N5/369 , H04N5/374
CPC分类号： H04N1/193 , H04N3/1581
摘要： A plurality of opto-electro conversion elements are arranged integrally in a row to constitute a line image sensor to produce respective image bit signals. A plurality of switching elements are connected to the corresponding conversion elements and switchable between on and off states to read out the corresponding bit image signals. A scanning circuit scans sequentially the switching elements to successively turn on them to thereby effect the sequential reading of bit image signals. An initiating circuit is connected to the scanning circuit for generating an initiating signal effective to initiate the scanning circuit. An ending circuit is also connected to the scanning circuit and operates after the switching element of last stage is turned off for generating an ending signal indicative of the ending of scanning operation for one line. A control circuit receives the initiating and ending signals and produces a control signal. A gate circuit is commonly connected to the switching elements and made open according to the control signal to output the series of image bit signals.
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公开(公告)号：US4992653A
公开(公告)日：1991-02-12
申请号：US510158
申请日：1990-04-16
IPC分类号： H04N1/028
CPC分类号： H04N3/1575
摘要： The image sensor of the linear type includes a plurality of photoelectric conversion elements, switching elements each having an input terminal connected to each photoelectric conversion element and an output terminal for reading out a detection signal produced from the corresponding photoelectric conversion element, and a scanning circuit for sequentially driving the switching elements. A first common line is connected to output terminals of odd-numbered switching elements. A second common line is connected to output terminals of even-numbered switching elements. A first reading gate has an output terminal and an input terminal connected to the first common line. A first reset gate has an output terminal and an input terminal connected to the first common line. A second reading gate has an output terminal and an input terminal connected to the second common line. A second reset gate has an output terminal and an input terminal connected to the second common line. A third common connecting line is connected between the output terminals of first and second reading gates and a signal output terminal for outputting the detection signals. A reset power source terminal is connected to the output terminals of the first and second reset gates. A control circuit operates with the sequential driving of the switching elements for controlling the first and second reading gates and the first and second reset gates so as to output the detection signals while sequentially resetting the photoelectric conversion elements.
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7.发明授权Method of manufacturing semiconductor device having trapezoidal shaped substrate sections 失效制造具有梯形基板部分的半导体器件的方法
公开(公告)号：US4839300A
公开(公告)日：1989-06-13
申请号：US937532
申请日：1986-12-03
IPC分类号： H01L21/301 , B28D5/00 , B28D5/02 , H01L21/304 , H01L31/02
CPC分类号： B28D5/022 , H01L21/3043
摘要： A method for manufacturing a semiconductor device using inclined stage of a dicing saw in order to cut the semiconductor substrate obliquely with respect to the depthwise direction. When a plurality of semiconductor chips diced obliquely are connected, a degree of connecting accuracy is increased, and it is possible to realize a contact-type image sensor of high resolving power and high accuracy.
摘要翻译： 为了使半导体衬底相对于深度方向倾斜地切割，制造使用切割锯的倾斜台的半导体器件的方法。 当倾斜切割的多个半导体芯片被连接时，连接精度的程度增加，并且可以实现高分辨率和高精度的接触型图像传感器。
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8.发明授权Image sensor having an array of operative and dummy bipolar transistors and pairs of pixel selecting switches connected thereto 失效具有操作和双向双极晶体管阵列的图像传感器和与其连接的像素选择开关的对
公开(公告)号：US5151587A
公开(公告)日：1992-09-29
申请号：US637489
申请日：1991-01-04
IPC分类号： H04N1/028 , H01L27/146
CPC分类号： H04N5/361 , H01L27/14681 , H04N5/3692 , H04N5/374
摘要： The image sensor is comprised of an array of operative bipolar transistors. Another array of optically shielded dummy bipolar transistors are formed adjacently to the operative bipolar transistors. Reset switches are connected to base regions of the operative and dummy bipolar transistors so as to reduce variation in dark image output, to ensure linearity of output signal, and to eliminate image storage.
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9.发明授权Photo-detecting semiconductor device with passivation suppressing multi-reflections 失效具有禁止多重反射的盲目检测半导体器件
公开(公告)号：US5119156A
公开(公告)日：1992-06-02
申请号：US239524
申请日：1988-09-01
IPC分类号： H01L27/14 , H01L27/146 , H04N5/335 , H04N5/365 , H04N5/369
CPC分类号： H01L27/14678 , H01L27/1462 , H01L27/14643
摘要： A photo-detecting element is covered with a passivation film having an uneven surface to avoid multi-reflection for the monochromatic incident light. The uneven film transmits the same intensity of incident light even if the mean thickness of uneven film is not constant over the entire surface of a semiconductor substrate.
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公开(公告)号：US5619345A
公开(公告)日：1997-04-08
申请号：US731741
申请日：1991-07-16
IPC分类号： H04N1/028 , H01L27/146 , H04N1/193 , H04N1/04
CPC分类号： H04N1/1903 , H01L27/146 , H04N1/193 , H04N1/1934
摘要： An image sensor of the contact type is comprised of a plurality of image sensor chips arranged linearly with one another. Each chip has an array of picture elements arranged at a given constant pitch which is set slightly smaller than a standard reading pitch in a main scanning direction, thereby ensuring uniform output performance of the image sensor.
摘要翻译： 接触型的图像传感器由彼此线性排列的多个图像传感器芯片组成。 每个芯片具有以给定的恒定间距排列的像素阵列，其被设置为略小于主扫描方向上的标准读取间距，从而确保图像传感器的均匀的输出性能。
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