发明授权
US4910709A Complementary metal-oxide-semiconductor transistor and one-capacitor
dynamic-random-access memory cell
失效
互补金属氧化物半导体晶体管和单电容器动态随机存取存储器单元
- 专利标题： Complementary metal-oxide-semiconductor transistor and one-capacitor dynamic-random-access memory cell
- 专利标题（中）： 互补金属氧化物半导体晶体管和单电容器动态随机存取存储器单元
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申请号： US230410申请日： 1988-08-10
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公开(公告)号： US4910709A公开(公告)日： 1990-03-20
- 发明人: Sang H. Dhong , Nicky C. Lu , Walter H. Henkels
- 申请人： Sang H. Dhong , Nicky C. Lu , Walter H. Henkels
- 申请人地址： NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： NY Armonk
- 主分类号： G11C11/405
- IPC分类号： G11C11/405 ; G11C11/404 ; G11C11/409 ; H01L21/8238 ; H01L21/8242 ; H01L27/06 ; H01L27/092 ; H01L27/108
摘要：
A complementary MOS one-capacitor dynamic RAM cell which operates with a non-boosted wordline without a threshold loss problem and which includes one storage capacitor and n- and p-type transfer devices connected to the storage capacitor which function as two complementary transistor devices having gates controlled by complementary signals on the RAM wordlines.
公开/授权文献
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