摘要:
A semiconductor memory cell is provided that includes a trench capacitor and an access transistor. The access transistor comprises a source region, a drain region, a gate structure overlying the trench capacitor, and an active body region that couples the drain region to the source region. The active body region directly contacts the trench capacitor.
摘要:
A method for fabricating a memory cell is provided. A trench is formed in a semiconductor structure that comprises a semiconductor layer, and a trench capacitor is formed in the trench. Conductivity determining impurities are implanted into the semiconductor structure to create a well region in the semiconductor layer that is directly coupled to the trench capacitor. A gate structure is formed overlying a portion of the well region. Conductivity determining ions are then implanted into other portions of the well region to form a source region and a drain region, and to define an active body region between the source region and the drain region. The active body region directly contacts the trench capacitor.
摘要:
Mechanisms for modifying a test pattern to control power supply noise are provided. A portion of a sequence of states in a test sequence of a test pattern waveform is modified so as to achieve a circuit voltage, e.g., an on-chip voltage, which approximates a nominal circuit voltage, such as produced by the application of other portions of the sequence of states in the same or different test sequences. For example, hold state cycles or shift-scan state cycles may be inserted or removed prior to test state cycles in the test pattern waveform. The insertion/removal shifts the occurrence of the test state cycles within the test pattern waveform so as to adjust the voltage response of the test state cycles so that they more closely approximate a nominal voltage response. In this way, false failures due to noise in the voltage supply may be eliminated.
摘要:
A voltage identifier (VID) sorting system is provided that optimizes processor power and operating voltage guardband at a constant processor frequency. The VID sorting system determines a voltage versus current curve for the processor. The VID sorting system then uses the voltage versus current characteristics to calculate the power for each VID to determine an acceptable range of VIDs within the maximum power criteria. The VID sorting system then tests VIDs in the range and selects a VID from the range to optimize for minimum power and/or maximum voltage guardband at a constant processor frequency.
摘要:
A power estimation system uses a hardware accelerated simulator to advance simulation to a point of interest for power estimation. The hardware accelerated simulator generates a checkpoint file, which is then used by a software simulator to initiate simulation of the processor design model for power estimation. An on-the-fly power estimator provides power calculations in memory. Thus, the power estimation system described herein isolates instruction sequences to determine portions of software code that may consume excess power or generate noise and to provide a more accurate power estimate on the fly.
摘要:
A memory system including a memory array with redundant wordlines is disclosed. The memory system includes a memory wordline tester that determines if any of the wordlines exhibits a defect. The memory system also includes decoder redundancy logic that efficiently couples to wordline shift logic using a reduced number of control signal lines therebetween. The shift logic shifts defective wordlines to upstream wordlines in the array to bypass the defective wordlines.
摘要:
A sensing technique uses a variable precharge voltage sensing with a single bitline swing in a DRAM cell or array of DRAM cells so that the power dissipation is reduced. The bitline precharge voltage varies from one RAS cycle to the next RAS cycle depending upon the level of the data in the accessed cells. Such an arrangement eliminates the need for a reference voltage generator since the precharge voltage is not the same voltage for each RAS cycle.
摘要:
A new interdigitated folded bit line (IFBL) architecture for a future generation high density semiconductor memory design is disclosed. In the architecture, the basic cross-point memory cells are organized orthogonally in rows and columns to form an array matrix. The bit lines run in a row direction while the word lines run in a column direction. Transfer transistors are designed to be shared with the same drain junction and the same bit line contact in order to save area. A choice of at least two described embodiments are provided. In one embodiment, referred to as the offset bit line structure, the bit lines are constructed by using two layers of interconnection lines to connect the interdigitated cells associated to it. By connecting the bit line contacts and with two different interconnecting layers and in an alternating row order, the true and complement bit lines and will run parallel to both sides of the memory array. In another embodiment, referred to as the side wall bit line structure, the bit lines are constructed by using the conductive side wall spacer rails to connect the interdigitated cells associated to it. By connecting the side wall bit line contacts with two sided-side wall spacer rails in an alternating row order, the true and complement bit lines will run parallel to both sides of the memory array.
摘要:
A high density substrate plate DRAM cell memory device and process are described in which a buried well region is formed adjacent to deep trench capacitors such that the substrate region of DRAM transfer FETs can be electrically isolated from other FETs on a semiconductor substrate. The buried region is partially formed by ion implantation and diffusion to intersect the walls of the deep trenches.
摘要:
A DRAM is described including a plurality of operable storage cells, each cell including a capacitance for storing a charge indicative of data. The charge tends to dissipate below an acceptable level after a predetermined time interval T1 for a majority of the operable cells and for a minority of the operable cells, it dissipates below the acceptable level after a shorter time interval T2. The time between DRAM refresh cycles is adjusted so as to be greater than time interval T2. The DRAM comprises: a plurality of redundant storage cells; a decoder for receiving the address of an operable memory cell and providing a first output if the address indicates one of the operable cells of the minority of cells and a second output if the address indicates one of the operable cells of the majority. A switching circuit is responsive to the first output to enable access of a redundant stoarge cell and to prevent access of the minority storage cell. In a preferred embodiment, the redundant storage cells are configured as static storage circuits.