发明授权
- 专利标题: Reversible memory structure for optical reading and writing and which is capable of erasure
- 专利标题(中): 用于光学读写的可逆存储器结构,能够擦除
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申请号: US270445申请日: 1988-11-09
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公开(公告)号: US4922462A公开(公告)日: 1990-05-01
- 发明人: Sumio Ikegawa , Yoshiaki Terashima , Nobuaki Yasuda , Katsutarou Ichihara , Shuichi Komatsu , Shinji Arai
- 申请人: Sumio Ikegawa , Yoshiaki Terashima , Nobuaki Yasuda , Katsutarou Ichihara , Shuichi Komatsu , Shinji Arai
- 申请人地址: JPX Kawasaki
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JPX Kawasaki
- 优先权: JPX59-276098 19841228; JPX60-247963 19851107; JPX60-247964 19851107
- 主分类号: G11B5/00
- IPC分类号: G11B5/00 ; G11B7/0055 ; G11B7/243 ; G11B11/00 ; G11B11/06 ; G11B11/105 ; G11B11/18 ; G11B11/20
摘要:
In a reversible memory system, a pulsed laser beam generated from a laser unit is directed to a recording layer formed on a substrate 1. The recording layer essentially consists of a recording medium, for example, an iron-nickel alloy containing iron as a major component and 27 to 30 atomic % of nickel, which undergoes martensite transformation from a low-temperature phase to a high-temperature phase at a predetermined temperature Af and which undergoes a stress-induced transformation at a characteristic temperature Md. When a region of the recording layer is irradiated with the laser beam having a predetermined intensity, the region undergoes a stress-induced transformation so that the region is changed from the high temperature phase to the low temperature phase.
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