摘要:
A thin film capacitor including a first electrode having on its surface a (100) face of cubic system or a (001) face of tetragonal system, a dielectric thin film epitaxially grown on the first electrode and exhibiting a crystal structure which inherently belongs to a perovskite structure of cubic system, and a second electrode formed on the dielectric thin film. Further, the dielectric thin film meets the following relationship V/V.sub.0 .gtoreq.1.01 where a unit lattice volume of true perovskite crystal structure belonging to the cubic system (lattice constant a.sub.0) is represented by V.sub.0 =a.sub.0.sup.3, and a unit lattice volume (lattice constant a=b.noteq.c) which is strained toward a tetragonal system after the epitaxial growth is represented by V=a.sup.2 c, and also meets the following relationship c/a.gtoreq.1.01 where c/a represents a ratio between a lattice constant "c" in the direction thicknesswise of the film and a lattice constant "a" in the direction parallel with a plane of the film.
摘要:
A semiconductor device in which an SiO.sub.2 film and a first wiring layer are arranged in this order on a GaAs substrate. A capacitor is formed on the first wiring layer. The capacitor includes a lower electrode which has a multi-layer structure consisting of a Ti layer, an Mo layer, and a Pt layer in this order from underside. The capacitor also includes a dielectric film made of strontium titanate. The capacitor further includes an upper electrode which has a multi-layer structure consisting of a WN.sub.x layer (120 um) and a W layer (300 nm) in this order from underside. That surface of the upper electrode, which is in contact with the dielectric film, is defined by the tungsten nitride layer.
摘要:
In a reversible memory system, a pulsed laser beam generated from a laser unit is directed to a recording layer formed on a substrate 1. The recording layer essentially consists of a recording medium, for example, an iron-nickel alloy containing iron as a major component and 27 to 30 atomic % of nickel, which undergoes martensite transformation from a low-temperature phase to a high-temperature phase at a predetermined temperature Af and which undergoes a stress-induced transformation at a characteristic temperature Md. When a region of the recording layer is irradiated with the laser beam having a predetermined intensity, the region undergoes a stress-induced transformation so that the region is changed from the high temperature phase to the low temperature phase.
摘要:
A method of determining the degree of deterioration of a heat-resistant ferritic steel part, such as that of Cr-Mo-V steel practically applied in a region of high temperature from at least one of the crystallization factors such as the particle size, interparticle distance and crystallization density of a carbide, particularly V.sub.4 C.sub.3 crystallized out in said ferritic steel part.
摘要:
An enlargement button that instruct enlargement of first to fourth buttons to is displayed on a display. The first to fourth buttons to are used to instruct the operation of a control device to be controlled by an electronic control unit to which a trouble diagnosing device is connected. When the enlargement button is manipulated, the first to fourth buttons to are enlarged in the display respectively in corners sections created by dividing the display screen substantially equally into four. With this arrangement, the operator no longer needs to monitor the first to the fourth button by eyes for manipulating these buttons, thereby improving the operability.
摘要:
An enlargement button that instruct enlargement of first to fourth buttons to is displayed on a display. The first to fourth buttons to are used to instruct the operation of a control device to be controlled by an electronic control unit to which a trouble diagnosing device is connected. When the enlargement button is manipulated, the first to fourth buttons to are enlarged in the display respectively in corners sections created by dividing the display screen substantially equally into four. With this arrangement, the operator no longer needs to monitor the first to the fourth button by eyes for manipulating these buttons, thereby improving the operability.
摘要:
The close-packed plane of a single crystal forming an electrode line such as electrodes or lines of a semiconductor device whose active regions are reduced in size, i.e., highly integrated, is arranged parallel to the longitudinal direction of the line; or in the case of a polycrystalline electrode line, the angle formed between the normal line direction of the close-packed plane of its crystal grains and that of the electrode line is arranged to be 80.degree. or less.
摘要:
A method for recording and reproducing information on or from an optical recording medium, which comprises:recording information by illuminating light to the optical recording medium which is equipped as a recording film with a thin film comprising dispersed fine grains of a material capable of showing a metal-insulator transition to cause the metal-insulator transition owing to the heating effect of the light; and reproducing the information by utilizing changes in optical characteristics owing to a plasma resonance absorption by the fine grains dispersed in the thin film. The method of this invention permits high-density recording with high sensitivity and upon reproduction, enables reproduction of record with a high signal/noise ratio. The recording medium obtained by this method is an erasable optical recording medium, which permits its reutilization for recording and reproduction after erasure of the previously-stored record.
摘要:
A semiconductor memory device comprising a silicon substrate, a plurality of switching transistors formed on the silicon substrate, an insulating layer having an opening and formed on a surface portion of the silicon substrate where the plurality of switching transistors formed, and a plurality of capacitors for accumulating electric charge formed on the insulating layer and connected respectively to the switching transistors via a conductive film buried in the opening of insulating layer, wherein each of the capacitors for accumulating electric charge is provided with an underlying crystal layer formed on the insulating layer and with a dielectric film consisting essentially of a ferroelectric material and epitaxially or orientationaly grown on the underlying crystal layer, and the switching transistors and the capacitors for accumulating electric charge connected to each other constitute a plurality of memory cells arranged in a two-dimensional pattern.
摘要:
A semiconductor memory device having a semiconductor substrate, an insulating layer provided on the substrate, and a memory cell. The memory cell has a switching transistor provided on the substrate and a charge storage element in a trench made in the insulating layer. The charge storage element has a bottom electrode, a dielectric layer and a top electrode deposited one on another in the order mentioned.