发明授权
US4928156A N-channel MOS transistors having source/drain regions with germanium
失效
具有锗源极/漏极区域的N沟道MOS晶体管
- 专利标题: N-channel MOS transistors having source/drain regions with germanium
- 专利标题(中): 具有锗源极/漏极区域的N沟道MOS晶体管
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申请号: US319000申请日: 1989-03-06
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公开(公告)号: US4928156A公开(公告)日: 1990-05-22
- 发明人: John R. Alvis , James R. Pfiester , Orin W. Holland
- 申请人: John R. Alvis , James R. Pfiester , Orin W. Holland
- 申请人地址: IL Schaumburg
- 专利权人: Motorola, Inc.
- 当前专利权人: Motorola, Inc.
- 当前专利权人地址: IL Schaumburg
- 主分类号: H01L21/265
- IPC分类号: H01L21/265 ; H01L21/336 ; H01L29/08 ; H01L29/167 ; H01L29/36 ; H01L29/78
摘要:
Metal-oxide-semiconductor (MOS) transistors with n-type source/drain regions also having germanium-doped regions in or near the source/drains. The presence of germanium near or at the location of phosphorus in graded source drains (GSDs), lightly doped drains (LDDs) and double diffused drains (DDDs) gives a better profile of the drain region with a reduced junction depth than that obtainable with phosphorus or particularly phosphorus and arsenic together. Good grading of the drain junction to avoid hot carrier instability or hot carrier injection problems is obtained along with shallow source junctions, which minimizes lateral dopant diffusion and decreases the distance between n.sup.- and n.sup.+ regions in GSDs and LDDs.