发明授权
- 专利标题： Plasma etch of masked superconductor film
- 专利标题（中）： 掩膜超导体膜的等离子体蚀刻
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申请号： US283417申请日： 1988-12-12
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公开(公告)号： US4933318A公开(公告)日： 1990-06-12
- 发明人: Maritza G. J. Heijman
- 申请人： Maritza G. J. Heijman
- 申请人地址： NY New York
- 专利权人： U.S. Philips Corporation
- 当前专利权人： U.S. Philips Corporation
- 当前专利权人地址： NY New York
- 优先权： NLX8703039 19871216
- 主分类号： G03F7/26
- IPC分类号： G03F7/26 ; C23F4/00 ; H01B12/06 ; H01B13/00 ; H01L21/312 ; H01L39/24
摘要：
A method of manufacturing a thin film of an oxidic superconducting material in accordance with a pattern, in which a pattern is manufactured by means of etching using reactive ions and a mask of aluminium oxide or silicon oxide, said method enabling patterns having line widths smaller than 2 .mu.m to be manufactured with great accuracy without influencing the composition of the superconducting thin film in such a manner that the superconducting properties deteriorate.
公开/授权文献
- US5424682A Variable gain amplifier circuit 公开/授权日：1995-06-13