The invention provides a sub-micron MOS device and process for manufacturing with contacts down to 0.1 microns. It also provides a sub-micron bipolar device and process for manufacturing it with contacts down to 0.1 microns. Further, there is provided a sub-micron bipolar device of a type having emitter, base and collector adjacent each other rather than in surrounding relationship, together with contacts down to 0.1 micron and process for making the same. All processes and devices utilize doped polysilicon as the electrodes for the device elements, and some convert polysilicon to polyoxide, except where protected by nitride buttons over the electrodes to prevent oxidation of the polysilicon therebeneath. One embodiment surrounds the polysilicon contacts with low temperature oxide covered by SOG. In the polysilicon oxidized devices, the contacts may be made oversized to compensate for irregularities in processing.