发明授权
- 专利标题： Semiconductor integrated circuit
- 专利标题（中）： 半导体集成电路
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申请号： US818908申请日： 1986-01-15
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公开(公告)号： US4949152A公开(公告)日： 1990-08-14
- 发明人: Masamichi Asano , Hiroshi Iwahashi
- 申请人： Masamichi Asano , Hiroshi Iwahashi
- 申请人地址： JPX Kanagawa
- 专利权人： Tokyo Shibaura Denki Kabushiki Kaisha
- 当前专利权人： Tokyo Shibaura Denki Kabushiki Kaisha
- 当前专利权人地址： JPX Kanagawa
- 优先权： JPX55-054555 19800424
- 主分类号： H01L31/10
- IPC分类号： H01L31/10 ; H01L21/8247 ; H01L27/088 ; H01L27/144 ; H01L27/15 ; H01L29/78 ; H01L29/786 ; H01L29/788 ; H01L29/792 ; H01L31/0216
摘要：
A semiconductor integrated circuit having a polycrystalline light interrupting layer covering at least one P-N junction. Photo leakage currents produced at the P-N junction by irradiation with light are thus decreased, and malfunctions are prevented.