发明授权
US4982253A Semiconductor charge storage element and method of operating such a
storage element
失效
半导体电荷存储元件和操作这种存储元件的方法
- 专利标题: Semiconductor charge storage element and method of operating such a storage element
- 专利标题(中): 半导体电荷存储元件和操作这种存储元件的方法
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申请号: US189633申请日: 1988-05-03
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公开(公告)号: US4982253A公开(公告)日: 1991-01-01
- 发明人: Josef Kemmer , Gerhard Lutz
- 申请人: Josef Kemmer , Gerhard Lutz
- 申请人地址: DEX Munich DEX Munich
- 专利权人: Messerschmitt-Boelkow-Blohm GmbH,Lutz; Gerhard
- 当前专利权人: Messerschmitt-Boelkow-Blohm GmbH,Lutz; Gerhard
- 当前专利权人地址: DEX Munich DEX Munich
- 优先权: DEX3715675 19870511
- 主分类号: H01L27/10
- IPC分类号: H01L27/10 ; H01L27/14 ; H01L27/146 ; H01L27/148 ; H01L31/02 ; H01L31/0248 ; H04N5/335
摘要:
In a semiconductor element having a semiconductor body, an electrode structure is arranged on at least one major surface of the element for storing charge carriers of at least one conductivity in cells formed by the electrode structure. Control electrodes which are at least partially enclosed in the semiconductor body are arranged in at least one plane essentially parallel to the major surface of the semiconductor body. The control electrodes similarly enable charge carriers to be stored in defined cells. The control electrodes stored also make it possible to shift stored charges from one cell to another, whereby at least two independent charge images can be stored in a three-dimensionally arranged storage cell pattern.
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