发明授权
US4990973A Method of producing an MMIC and the integrated circuit produced thereby
失效
制造MMIC的方法和由此产生的集成电路
- 专利标题: Method of producing an MMIC and the integrated circuit produced thereby
- 专利标题(中): 制造MMIC的方法和由此产生的集成电路
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申请号: US436615申请日: 1989-11-15
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公开(公告)号: US4990973A公开(公告)日: 1991-02-05
- 发明人: Takahide Ishikawa , Kazuhiko Nakahara
- 申请人: Takahide Ishikawa , Kazuhiko Nakahara
- 申请人地址: JPX Tokyo
- 专利权人: Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人: Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人地址: JPX Tokyo
- 优先权: JPX62-335886 19871228
- 主分类号: H01L27/04
- IPC分类号: H01L27/04 ; H01L21/822 ; H01L21/8232 ; H01L27/06 ; H01L27/095 ; H03F1/30 ; H03F3/195 ; H03F3/60
摘要:
A method of producing MMIC's and the MMIC thus produced having a reproducible quiescent operating point from lot to lot under the same bias conditions. The source to drain saturation current of the amplifier MESFET in the MMIC can vary from lot to lot if the depth of the gate recess varies from lot to lot. As a result, the quiescent operating point of the amplifier under the same bias conditions can vary from lot to lot. A compensated gate bias source, preferably in the form of an extra MESFET on the MMIC, is fabricated at the same time as the amplifier MESFET and thus has a gate recess having a depth which precisely matches that of the amplifier MESFET. The extra MESFET is connected as a compensated gate bias source and has a resistance which is a function of the depth of the gate recess and thus compensates the quiescent operating point of the amplifier MESFET.
公开/授权文献
- US5647816A Automatic transmission 公开/授权日:1997-07-15
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