发明授权
- 专利标题: Aluminum-implant leakage reduction
- 专利标题(中): 铝 - 植入物泄漏减少
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申请号: US553218申请日: 1990-07-12
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公开(公告)号: US4999309A公开(公告)日: 1991-03-12
- 发明人: Matthew S. Buynoski
- 申请人: Matthew S. Buynoski
- 申请人地址: CA Santa Clara
- 专利权人: National Semiconductor Corporation
- 当前专利权人: National Semiconductor Corporation
- 当前专利权人地址: CA Santa Clara
- 主分类号: H01L27/04
- IPC分类号: H01L27/04 ; H01L21/225 ; H01L21/266 ; H01L21/329 ; H01L21/331 ; H01L21/822 ; H01L29/73 ; H01L29/732 ; H01L29/93
摘要:
An improved process is described for the formation of PNP transistor collector base junctions or PN junction capaciters in silicon monolithic integrated circuits that employ the ion implantation and diffusion of aluminum in these regions that are to contain high performance PNP transistors or capacitors. The process reduces or eliminates the leakage typically found in such devices.
公开/授权文献
- US5594535A Refillable toner cartridge 公开/授权日:1997-01-14