发明授权
US5003360A Semiconductor functional element 失效
半导体功能元件

Semiconductor functional element
摘要:
A semiconductor functional element is composed of at least one bifurcated branch conductive path coplanar with a heterojunction in a semiconductor with a band discontinuity that produces a potential well, and at least two gate electrodes designed for digital operations and a common electrode facing each other. The gate electrodes cross both paths and the two gate electrodes are located outside of one path and the common electrode is located outside the other path so that electron wave conditions at the heterojunction are locally influenced by an electric field which can be changed by selecting a gate electrode to apply a voltage thereby forming a logic or a functional circuit.
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IPC分类:
H 电学
H01 基本电气元件
H01L 半导体器件;其他类目中不包括的电固体器件(使用半导体器件的测量入G01;一般电阻器入H01C;磁体、电感器、变压器入H01F;一般电容器入H01G;电解型器件入H01G9/00;电池组、蓄电池入H01M;波导管、谐振器或波导型线路入H01P;线路连接器、汇流器入H01R;受激发射器件入H01S;机电谐振器入H03H;扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R;一般电光源入H05B;印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K;在具有特殊应用的电路中使用的半导体器件见应用相关的小类)
H01L29/00 专门适用于整流、放大、振荡或切换,并具有至少一个电位跃变势垒或表面势垒的半导体器件;具有至少一个电位跃变势垒或表面势垒,例如PN结耗尽层或载流子集结层的电容器或电阻器;半导体本体或其电极的零部件(H01L31/00至H01L47/00,H01L51/05优先;除半导体或其电极之外的零部件入H01L23/00;由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00)
H01L29/02 .按其半导体本体的特征区分的
H01L29/12 ..按其构成材料的特征区分的
H01L29/20 ...除掺杂材料或其他杂质外,只包括AⅢBⅤ化合物的
H01L29/201 ....包括两种或更多种化合物的
H01L29/205 .....在不同半导体区域中的
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