发明授权
- 专利标题： Non-volatile memory
- 专利标题（中）： 非易失性存储器
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申请号： US363366申请日： 1989-05-31
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公开(公告)号： US5008722A公开(公告)日： 1991-04-16
- 发明人: Agerico L. Esquivel
- 申请人： Agerico L. Esquivel
- 申请人地址： TX Dallas
- 专利权人： Texas Instruments Incorporated
- 当前专利权人： Texas Instruments Incorporated
- 当前专利权人地址： TX Dallas
- 主分类号： H01L21/28
- IPC分类号： H01L21/28 ; H01L21/762 ; H01L21/8247 ; H01L27/115
摘要：
A cross point EPROM array has trenches to provide improved isolation between adjacent buried N+ bitlines at locations where the adjacent buried N+ bitlines are not separated by a FAMOS transistor. This results in improved leakage current, improved punchthrough voltage characteristics, and in improved programmability for the cell.
公开/授权文献
- US5490467A Folding table mechanism 公开/授权日：1996-02-13
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