发明授权
US5010520A Nonvolatile semiconductor memory device with stabilized data write
characteristic
失效
具有稳定数据写特性的非易失性半导体存储器件
- 专利标题： Nonvolatile semiconductor memory device with stabilized data write characteristic
- 专利标题（中）： 具有稳定数据写特性的非易失性半导体存储器件
-
申请号： US224953申请日： 1988-07-27
-
公开(公告)号： US5010520A公开(公告)日： 1991-04-23
- 发明人: Hidenobu Minagawa , Yuuichi Tatsumi , Hiroshi Iwahashi , Masamichi Asano , Hiroto Nakai , Mizuho Imai
- 申请人： Hidenobu Minagawa , Yuuichi Tatsumi , Hiroshi Iwahashi , Masamichi Asano , Hiroto Nakai , Mizuho Imai
- 申请人地址： JPX Kawasaki
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JPX Kawasaki
- 优先权： JPX62-189433 19870729; JPX62-285748 19871112
- 主分类号： G11C16/10
- IPC分类号： G11C16/10 ; G11C16/24 ; G11C16/30 ; G11C16/34
摘要：
In a nonvolatile semiconductor memory device, a wiring layer is connected between a power source and a memory cell. Resistance of the wiring layer is larger than the on-resistance of a load transistor, so that the load transistor substantially determines the load characteristic. Therefore, the load characteristic curve is more gentle in inclination and more rectilinear in shape. This makes the data writing operation stable against a variance in the channel lengths of manufactured transistors forming the memory cells.
公开/授权文献
- US5481834A Fire-rated panel 公开/授权日：1996-01-09