发明授权
- 专利标题： Method of oxide etching with condensed plasma reaction product
- 专利标题（中）： 浓缩等离子体反应产物的氧化蚀刻方法
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申请号： US457946申请日： 1989-12-27
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公开(公告)号： US5030319A公开(公告)日： 1991-07-09
- 发明人: Hirotaka Nishino , Nobuo Hayasaka , Haruo Okano
- 申请人： Hirotaka Nishino , Nobuo Hayasaka , Haruo Okano
- 申请人地址： JPX Kawasaki
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JPX Kawasaki
- 优先权： JPX63-327594 19881227
- 主分类号： H01L21/311
- IPC分类号： H01L21/311 ; H01L21/768
摘要：
Oxide material, on a substrate, in a reactor, is etched by dissolving a hydrogen halide reaction product in a liquid phase reaction product. Both the hydrogen halide and liquid phase reaction products are produced through a chemical reaction of a reactive gas containing hydrogen and halogen elements as well as at least one gaseous compound which has been remotely activated. The liquid phase reaction product is obtained by condensation on the oxide material. The use of charged particle beams and irradiating light is discussed.
公开/授权文献
- US4561804A Earth retaining method 公开/授权日：1985-12-31
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