发明授权
US5032528A Method of forming a contact hole in semiconductor integrated circuit
失效
在半导体集成电路中形成接触孔的方法
- 专利标题： Method of forming a contact hole in semiconductor integrated circuit
- 专利标题（中）： 在半导体集成电路中形成接触孔的方法
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申请号： US538764申请日： 1990-06-15
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公开(公告)号： US5032528A公开(公告)日： 1991-07-16
- 发明人: Yoshiaki Asao , Shizuo Sawada
- 申请人： Yoshiaki Asao , Shizuo Sawada
- 申请人地址： JPX Kawasaki
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JPX Kawasaki
- 优先权： JPX1-205671 19890810
- 主分类号： H01L21/28
- IPC分类号： H01L21/28 ; H01L21/316 ; H01L21/768
摘要：
Regions having different impurity concentrations are formed in the main surface region of the semiconductor substrate. Accordingly, when the substrate is oxidized, oxide films having different thickness are formed. More specifically, the oxide film is formed more deeply on the surface region of the substrate having a high impurity concentration in which ions are injected than on the surface region in which no ions are injected. In the etching step, since the thinner oxide film is removed while the thicker oxide film remains, the surface of the region under the thinner oxide film is exposed, and thus a contact hole is formed. If, in the step of forming a contact hole, a portion of the thinner oxide film is covered by a resist pattern, only the regiion of the oxide film which is not masked by the resist pattern is etched and the substrate surface thereunder is exposed, and thus a contact hole is formed.
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